Measurement of finite-frequency current statistics in a single-electron transistor

Niels Ubbelohde, Christian Fricke, Christian Flindt, Frank Hohls, Rolf J. Haug*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

108 Citations (Scopus)

Abstract

Electron transport in nanoscale structures is strongly influenced by the Coulomb interaction that gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges, as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single-electron transistor can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the single-electron device. We have directly measured the frequency-dependent current statistics and, hereby, fully characterized the fundamental tunnelling processes in the single-electron transistor. Our experiment paves the way for future investigations of interaction and coherence-induced correlation effects in quantum transport.

Original languageEnglish
Article number612
Pages (from-to)1-6
Number of pages6
JournalNature Communications
Volume3
DOIs
Publication statusPublished - 3 Jan 2012
MoE publication typeA1 Journal article-refereed

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