MBE growth of nanowires using colloidal Ag nanoparticles

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


Original languageEnglish
Title of host publication33rd International Conference on the Physics of Semiconductors
Publication statusPublished - 15 Aug 2017
MoE publication typeA4 Article in a conference publication
EventInternational Conference on the Physics of Semiconductors - Beijing, China
Duration: 31 Jul 20165 Aug 2016
Conference number: 33

Publication series

NameIOP Conference Series - Journal of Physics: Conference Series
ISSN (Print)1742-6588
ISSN (Electronic)1742-6596


ConferenceInternational Conference on the Physics of Semiconductors
Abbreviated titleICPS


  • Alexei D. Bouravleuv
  • I. V. Ilkiv
  • Rodion Reznik
  • I. V. Shtrom
  • A.I. Khrebtov
  • Yu B. Samsonenko
  • I. P. Soshnikov
  • George E. Cirlin
  • Harri Lipsanen

Research units

  • St. Petersburg National Research University Academic of the Russian Academy of Sciences
  • St. Petersburg State University


Ag colloidal nanoparticles are used as a catalyst for growth of GaAs nanowires by the molecular beam epitaxy on the Si(111) and GaAs(111)B substrate surfaces. The scanning electron microscopy measurements revealed that the nanowire formation occurs in different ways on different substrates, but the parameters of the synthesized nanowires open great prospects for their further use.

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