MBE growth of nanowires using colloidal Ag nanoparticles

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

  • Alexei D. Bouravleuv
  • I. V. Ilkiv
  • Rodion Reznik
  • I. V. Shtrom
  • A.I. Khrebtov
  • Yu B. Samsonenko
  • I. P. Soshnikov
  • George E. Cirlin
  • Harri Lipsanen

Research units

  • RAS - St. Petersburg Academic University
  • St. Petersburg State University

Abstract

Ag colloidal nanoparticles are used as a catalyst for growth of GaAs nanowires by the molecular beam epitaxy on the Si(111) and GaAs(111)B substrate surfaces. The scanning electron microscopy measurements revealed that the nanowire formation occurs in different ways on different substrates, but the parameters of the synthesized nanowires open great prospects for their further use.

Details

Original languageEnglish
Title of host publication33rd International Conference on the Physics of Semiconductors
Publication statusPublished - 15 Aug 2017
MoE publication typeA4 Article in a conference publication
EventInternational Conference on the Physics of Semiconductors - Beijing, China
Duration: 31 Jul 20165 Aug 2016
Conference number: 33

Publication series

NameIOP Conference Series - Journal of Physics: Conference Series
PublisherIOP
Volume864
ISSN (Print)1742-6588
ISSN (Electronic)1742-6596

Conference

ConferenceInternational Conference on the Physics of Semiconductors
Abbreviated titleICPS
CountryChina
CityBeijing
Period31/07/201605/08/2016

Download statistics

No data available

ID: 15294498