Materials and technology issues for the next generation of power electronic devices

Ahmad Zubair, John Niroula, Nadim Chowdhury, Yuhao Zhang, Jori Lemettinen, Tomas Palacios*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Abstract

By 2030, about 80% of all US electricity is expected to flow through power electronics. This will require power electronic devices and circuits with much higher efficiency and smaller form-factor than today's silicon-based systems. III-Nitride semiconductors and other ultra-wide bandgap materials are ideal platforms for the new generation of power electronics thanks to the combination of excellent transport properties and the high critical electric field enabled by their wide bandgap [1]. This talk will discuss recent progress in our group in developing high voltage power transistors and diodes based on wide bandgap materials.

Original languageEnglish
Title of host publication2020 Device Research Conference, DRC 2020
PublisherIEEE
Number of pages2
ISBN (Electronic)9781728170473
DOIs
Publication statusPublished - Jun 2020
MoE publication typeA4 Article in a conference publication
EventDevice Research Conference - Columbus, United States
Duration: 21 Jun 202024 Jun 2020
Conference number: 78

Publication series

NameDevice Research Conference
ISSN (Print)1548-3770

Conference

ConferenceDevice Research Conference
Abbreviated titleDRC
CountryUnited States
CityColumbus
Period21/06/202024/06/2020

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