Materials and technology issues for the next generation of power electronic devices

Ahmad Zubair; John Niroula; Nadim Chowdhury; Yuhao Zhang; Jori Lemettinen; Tomas Palacios

doi:10.1109/DRC50226.2020.9135183

Materials and technology issues for the next generation of power electronic devices

Ahmad Zubair, John Niroula, Nadim Chowdhury, Yuhao Zhang, Jori Lemettinen, Tomas Palacios^*

^*Corresponding author for this work

Department of Electronics and Nanoengineering

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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Abstract

By 2030, about 80% of all US electricity is expected to flow through power electronics. This will require power electronic devices and circuits with much higher efficiency and smaller form-factor than today's silicon-based systems. III-Nitride semiconductors and other ultra-wide bandgap materials are ideal platforms for the new generation of power electronics thanks to the combination of excellent transport properties and the high critical electric field enabled by their wide bandgap [1]. This talk will discuss recent progress in our group in developing high voltage power transistors and diodes based on wide bandgap materials.

Original language	English
Title of host publication	2020 Device Research Conference, DRC 2020
Publisher	IEEE
Number of pages	2
ISBN (Electronic)	9781728170473
DOIs	https://doi.org/10.1109/DRC50226.2020.9135183
Publication status	Published - Jun 2020
MoE publication type	A4 Conference publication
Event	Device Research Conference - Columbus, United States Duration: 21 Jun 2020 → 24 Jun 2020 Conference number: 78

Publication series

Name	Device Research Conference
ISSN (Print)	1548-3770

Conference

Conference	Device Research Conference
Abbreviated title	DRC
Country/Territory	United States
City	Columbus
Period	21/06/2020 → 24/06/2020

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title = "Materials and technology issues for the next generation of power electronic devices",

abstract = "By 2030, about 80% of all US electricity is expected to flow through power electronics. This will require power electronic devices and circuits with much higher efficiency and smaller form-factor than today's silicon-based systems. III-Nitride semiconductors and other ultra-wide bandgap materials are ideal platforms for the new generation of power electronics thanks to the combination of excellent transport properties and the high critical electric field enabled by their wide bandgap [1]. This talk will discuss recent progress in our group in developing high voltage power transistors and diodes based on wide bandgap materials.",

author = "Ahmad Zubair and John Niroula and Nadim Chowdhury and Yuhao Zhang and Jori Lemettinen and Tomas Palacios",

year = "2020",

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language = "English",

series = "Device Research Conference",

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Zubair, A, Niroula, J, Chowdhury, N, Zhang, Y, Lemettinen, J & Palacios, T 2020, Materials and technology issues for the next generation of power electronic devices. in 2020 Device Research Conference, DRC 2020., 9135183, Device Research Conference, IEEE, Device Research Conference, Columbus, Ohio, United States, 21/06/2020. https://doi.org/10.1109/DRC50226.2020.9135183

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AU - Zubair, Ahmad

AU - Niroula, John

AU - Chowdhury, Nadim

AU - Zhang, Yuhao

AU - Lemettinen, Jori

AU - Palacios, Tomas

N1 - Conference code: 78

PY - 2020/6

Y1 - 2020/6

N2 - By 2030, about 80% of all US electricity is expected to flow through power electronics. This will require power electronic devices and circuits with much higher efficiency and smaller form-factor than today's silicon-based systems. III-Nitride semiconductors and other ultra-wide bandgap materials are ideal platforms for the new generation of power electronics thanks to the combination of excellent transport properties and the high critical electric field enabled by their wide bandgap [1]. This talk will discuss recent progress in our group in developing high voltage power transistors and diodes based on wide bandgap materials.

AB - By 2030, about 80% of all US electricity is expected to flow through power electronics. This will require power electronic devices and circuits with much higher efficiency and smaller form-factor than today's silicon-based systems. III-Nitride semiconductors and other ultra-wide bandgap materials are ideal platforms for the new generation of power electronics thanks to the combination of excellent transport properties and the high critical electric field enabled by their wide bandgap [1]. This talk will discuss recent progress in our group in developing high voltage power transistors and diodes based on wide bandgap materials.

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U2 - 10.1109/DRC50226.2020.9135183

DO - 10.1109/DRC50226.2020.9135183

M3 - Conference article in proceedings

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BT - 2020 Device Research Conference, DRC 2020

PB - IEEE

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ER -

Materials and technology issues for the next generation of power electronic devices

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