Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves

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Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves. / Bryantseva, T. A.; Lybchenko, D. V.; Lybchenko, V. E.; Markov, I.A.; Markov, Roman I.

In: Semiconductors, Vol. 48, No. 2, 02.2014, p. 184-190.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Bryantseva, TA, Lybchenko, DV, Lybchenko, VE, Markov, IA & Markov, RI 2014, 'Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves' Semiconductors, vol. 48, no. 2, pp. 184-190. https://doi.org/10.1134/S1063782614020067

APA

Bryantseva, T. A., Lybchenko, D. V., Lybchenko, V. E., Markov, I. A., & Markov, R. I. (2014). Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves. Semiconductors, 48(2), 184-190. https://doi.org/10.1134/S1063782614020067

Vancouver

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Bryantseva, T. A. ; Lybchenko, D. V. ; Lybchenko, V. E. ; Markov, I.A. ; Markov, Roman I. / Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves. In: Semiconductors. 2014 ; Vol. 48, No. 2. pp. 184-190.

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@article{b4e3a2154a4741309d0271e97cd00f39,
title = "Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves",
abstract = "Mass-transfer processes are investigated by the chemical analysis of gallium-arsenide surface layers after irradiation of the GaAs surface with low-intensity (13-25 mW) electromagnetic waves at a frequency of 75 GHz. The electromechanical stresses on the GaAs surface are shown to change under the action of radiation, and relaxation processes with the involvement of the mass transfer of charged particles arise. As a result of irradiation, islands based on the solution (Ga + As) or GaAs compounds are precipitated, and the surface bend of the basic GaAs compound changes. In this case, the mass transfer depends on the charged-particle drift under the action of voltage and on the surface self-diffusion rate under the action of mechanical stresses.",
keywords = "VACANCY",
author = "Bryantseva, {T. A.} and Lybchenko, {D. V.} and Lybchenko, {V. E.} and I.A. Markov and Markov, {Roman I.}",
year = "2014",
month = "2",
doi = "10.1134/S1063782614020067",
language = "English",
volume = "48",
pages = "184--190",
journal = "Semiconductors",
issn = "1063-7826",
number = "2",

}

RIS - Download

TY - JOUR

T1 - Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves

AU - Bryantseva, T. A.

AU - Lybchenko, D. V.

AU - Lybchenko, V. E.

AU - Markov, I.A.

AU - Markov, Roman I.

PY - 2014/2

Y1 - 2014/2

N2 - Mass-transfer processes are investigated by the chemical analysis of gallium-arsenide surface layers after irradiation of the GaAs surface with low-intensity (13-25 mW) electromagnetic waves at a frequency of 75 GHz. The electromechanical stresses on the GaAs surface are shown to change under the action of radiation, and relaxation processes with the involvement of the mass transfer of charged particles arise. As a result of irradiation, islands based on the solution (Ga + As) or GaAs compounds are precipitated, and the surface bend of the basic GaAs compound changes. In this case, the mass transfer depends on the charged-particle drift under the action of voltage and on the surface self-diffusion rate under the action of mechanical stresses.

AB - Mass-transfer processes are investigated by the chemical analysis of gallium-arsenide surface layers after irradiation of the GaAs surface with low-intensity (13-25 mW) electromagnetic waves at a frequency of 75 GHz. The electromechanical stresses on the GaAs surface are shown to change under the action of radiation, and relaxation processes with the involvement of the mass transfer of charged particles arise. As a result of irradiation, islands based on the solution (Ga + As) or GaAs compounds are precipitated, and the surface bend of the basic GaAs compound changes. In this case, the mass transfer depends on the charged-particle drift under the action of voltage and on the surface self-diffusion rate under the action of mechanical stresses.

KW - VACANCY

U2 - 10.1134/S1063782614020067

DO - 10.1134/S1063782614020067

M3 - Article

VL - 48

SP - 184

EP - 190

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 12977900