Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • T. A. Bryantseva
  • D. V. Lybchenko
  • V. E. Lybchenko
  • I.A. Markov
  • Roman I. Markov

Research units

  • Russian Academy of Sciences
  • Aalto University

Abstract

Mass-transfer processes are investigated by the chemical analysis of gallium-arsenide surface layers after irradiation of the GaAs surface with low-intensity (13-25 mW) electromagnetic waves at a frequency of 75 GHz. The electromechanical stresses on the GaAs surface are shown to change under the action of radiation, and relaxation processes with the involvement of the mass transfer of charged particles arise. As a result of irradiation, islands based on the solution (Ga + As) or GaAs compounds are precipitated, and the surface bend of the basic GaAs compound changes. In this case, the mass transfer depends on the charged-particle drift under the action of voltage and on the surface self-diffusion rate under the action of mechanical stresses.

Details

Original languageEnglish
Pages (from-to)184-190
Number of pages7
JournalSemiconductors
Volume48
Issue number2
Publication statusPublished - Feb 2014
MoE publication typeA1 Journal article-refereed

    Research areas

  • VACANCY

ID: 12977900