Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves

T. A. Bryantseva*, D. V. Lybchenko, V. E. Lybchenko, I.A. Markov, Roman I. Markov

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    Mass-transfer processes are investigated by the chemical analysis of gallium-arsenide surface layers after irradiation of the GaAs surface with low-intensity (13-25 mW) electromagnetic waves at a frequency of 75 GHz. The electromechanical stresses on the GaAs surface are shown to change under the action of radiation, and relaxation processes with the involvement of the mass transfer of charged particles arise. As a result of irradiation, islands based on the solution (Ga + As) or GaAs compounds are precipitated, and the surface bend of the basic GaAs compound changes. In this case, the mass transfer depends on the charged-particle drift under the action of voltage and on the surface self-diffusion rate under the action of mechanical stresses.

    Original languageEnglish
    Pages (from-to)184-190
    Number of pages7
    JournalSemiconductors
    Volume48
    Issue number2
    DOIs
    Publication statusPublished - Feb 2014
    MoE publication typeA1 Journal article-refereed

    Keywords

    • VACANCY

    Cite this