Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

Research output: Contribution to journalArticle

Researchers

Research units

  • VTT Technical Research Centre of Finland
  • Royal Institute of Technology
  • University of Würzburg
  • Lund University

Abstract

A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. Intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cathodoluminescene images confirm that the luminescence originates from the wires.

Details

Original languageEnglish
Pages (from-to)2828-2830
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number21
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

    Research areas

  • InGaAs, quantum wires

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