Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

Pekka Törmä; Olli Svensk; Muhammad Ali; Sami Suihkonen; Markku Sopanen; Maxim A. Odnoblyudov; Vladislav E. Bougrov

doi:10.1016/j.sse.2008.10.013

Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

Pekka Törmä^*, Olli Svensk, Muhammad Ali, Sami Suihkonen, Markku Sopanen, Maxim A. Odnoblyudov, Vladislav E. Bougrov

^*Corresponding author for this work

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Abstract

A simple wet etching method based on the use of hot sulphuric (H₂SO₄) acid for roughening of the backside of the sapphire substrates for creating light scattering objects without any lithography processes is described. Scanning electron microscope images show that this method offers a possibility to tailor the size of the scattering objects by varying the treatment time. A metal organic vapor phase epitaxy (MOVPE) grown light emitting diode (LED) structure having a roughened sapphire backside exhibits a 20-25% increase of the electroluminescence output power compared to a reference sample on the standard c-plane sapphire at the operating wavelength of 460 nm. © 2008 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	166-169
Number of pages	4
Journal	Solid-State Electronics
Volume	53
Issue number	2
DOIs	https://doi.org/10.1016/j.sse.2008.10.013
Publication status	Published - Feb 2009
MoE publication type	A1 Journal article-refereed

Keywords

Light emitting diode
MOCVD
Nitrides
Semiconducting III-V materials

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10.1016/j.sse.2008.10.013

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title = "Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs",

abstract = "A simple wet etching method based on the use of hot sulphuric (H2SO4) acid for roughening of the backside of the sapphire substrates for creating light scattering objects without any lithography processes is described. Scanning electron microscope images show that this method offers a possibility to tailor the size of the scattering objects by varying the treatment time. A metal organic vapor phase epitaxy (MOVPE) grown light emitting diode (LED) structure having a roughened sapphire backside exhibits a 20-25% increase of the electroluminescence output power compared to a reference sample on the standard c-plane sapphire at the operating wavelength of 460 nm. {\textcopyright} 2008 Elsevier Ltd. All rights reserved.",

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AU - Sopanen, Markku

AU - Odnoblyudov, Maxim A.

AU - Bougrov, Vladislav E.

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Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

Abstract

Keywords

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