Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models

Song Zhang*, Chiara Modanese, Guilherme Gaspar, Rune Søndenå, Gabriella Tranell, Marisa Di Sabatino

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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    Abstract

    In this work the measured majority carrier mobility in compensated silicon is compared to values predicted by two different models: Klaassen's model for conventional silicon and the more recent unified model for compensated silicon by Schindler et al (Schindler's model). The purpose of the comparison is to broaden the range of materials included in the newly developed model for compensated materials. As observed previously, the deviation of the prediction by Klaassen's model from the experimental data increases with increasing compensation ratio, RC. It is observed that above a critical RC value (RC > 5.5) the deviation from the measured values is lower for Schindler's model. Occasionally high deviations are observed, which are believed to be related to unusually high defect density of the samples, e.g. defects related to light elements (oxygen and carbon) or metal impurities. Such impurities may contribute considerably to the ionized impurity concentration. Therefore, it is suggested that knowledge of additional parameters to the doping concentration is needed in order to increase the accuracy of Schindler's model.

    Original languageEnglish
    Title of host publicationProceedings of the 6th International Conference on Crystalline Silicon Photovoltaics
    Subtitle of host publicationSiliconPV 2016
    PublisherElsevier Ltd.
    Pages278-283
    Number of pages6
    DOIs
    Publication statusPublished - 1 Aug 2016
    MoE publication typeA4 Article in a conference publication
    EventInternational Conference on Crystalline Silicon Photovoltaics - Chambéry, France
    Duration: 7 Mar 20169 Mar 2016
    Conference number: 6

    Publication series

    NameENERGY PROCEDIA
    PublisherElsevier
    Volume92
    ISSN (Electronic)1876-6102

    Conference

    ConferenceInternational Conference on Crystalline Silicon Photovoltaics
    Abbreviated titleSiliconPV
    CountryFrance
    CityChambéry
    Period07/03/201609/03/2016

    Keywords

    • Compensation
    • Defects
    • Mobility
    • Models

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