Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Majority Carrier Mobility of Compensated Silicon : Comparison of Room Temperature Measurements and Models. / Zhang, Song; Modanese, Chiara; Gaspar, Guilherme; Søndenå, Rune; Tranell, Gabriella; Di Sabatino, Marisa.

Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics: SiliconPV 2016. Elsevier Ltd., 2016. p. 278-283 (ENERGY PROCEDIA; Vol. 92).

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Zhang, S, Modanese, C, Gaspar, G, Søndenå, R, Tranell, G & Di Sabatino, M 2016, Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models. in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics: SiliconPV 2016. ENERGY PROCEDIA, vol. 92, Elsevier Ltd., pp. 278-283, International Conference on Crystalline Silicon Photovoltaics, Chambéry, France, 07/03/2016. https://doi.org/10.1016/j.egypro.2016.07.078

APA

Zhang, S., Modanese, C., Gaspar, G., Søndenå, R., Tranell, G., & Di Sabatino, M. (2016). Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models. In Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics: SiliconPV 2016 (pp. 278-283). (ENERGY PROCEDIA; Vol. 92). Elsevier Ltd.. https://doi.org/10.1016/j.egypro.2016.07.078

Vancouver

Zhang S, Modanese C, Gaspar G, Søndenå R, Tranell G, Di Sabatino M. Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models. In Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics: SiliconPV 2016. Elsevier Ltd. 2016. p. 278-283. (ENERGY PROCEDIA). https://doi.org/10.1016/j.egypro.2016.07.078

Author

Zhang, Song ; Modanese, Chiara ; Gaspar, Guilherme ; Søndenå, Rune ; Tranell, Gabriella ; Di Sabatino, Marisa. / Majority Carrier Mobility of Compensated Silicon : Comparison of Room Temperature Measurements and Models. Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics: SiliconPV 2016. Elsevier Ltd., 2016. pp. 278-283 (ENERGY PROCEDIA).

Bibtex - Download

@inproceedings{6ccfa178e4f14cd7925b4542e47aa4ed,
title = "Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models",
abstract = "In this work the measured majority carrier mobility in compensated silicon is compared to values predicted by two different models: Klaassen's model for conventional silicon and the more recent unified model for compensated silicon by Schindler et al (Schindler's model). The purpose of the comparison is to broaden the range of materials included in the newly developed model for compensated materials. As observed previously, the deviation of the prediction by Klaassen's model from the experimental data increases with increasing compensation ratio, RC. It is observed that above a critical RC value (RC > 5.5) the deviation from the measured values is lower for Schindler's model. Occasionally high deviations are observed, which are believed to be related to unusually high defect density of the samples, e.g. defects related to light elements (oxygen and carbon) or metal impurities. Such impurities may contribute considerably to the ionized impurity concentration. Therefore, it is suggested that knowledge of additional parameters to the doping concentration is needed in order to increase the accuracy of Schindler's model.",
keywords = "Compensation, Defects, Mobility, Models",
author = "Song Zhang and Chiara Modanese and Guilherme Gaspar and Rune S{\o}nden{\aa} and Gabriella Tranell and {Di Sabatino}, Marisa",
year = "2016",
month = "8",
day = "1",
doi = "10.1016/j.egypro.2016.07.078",
language = "English",
series = "ENERGY PROCEDIA",
publisher = "Elsevier Ltd.",
pages = "278--283",
booktitle = "Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics",

}

RIS - Download

TY - GEN

T1 - Majority Carrier Mobility of Compensated Silicon

T2 - Comparison of Room Temperature Measurements and Models

AU - Zhang, Song

AU - Modanese, Chiara

AU - Gaspar, Guilherme

AU - Søndenå, Rune

AU - Tranell, Gabriella

AU - Di Sabatino, Marisa

PY - 2016/8/1

Y1 - 2016/8/1

N2 - In this work the measured majority carrier mobility in compensated silicon is compared to values predicted by two different models: Klaassen's model for conventional silicon and the more recent unified model for compensated silicon by Schindler et al (Schindler's model). The purpose of the comparison is to broaden the range of materials included in the newly developed model for compensated materials. As observed previously, the deviation of the prediction by Klaassen's model from the experimental data increases with increasing compensation ratio, RC. It is observed that above a critical RC value (RC > 5.5) the deviation from the measured values is lower for Schindler's model. Occasionally high deviations are observed, which are believed to be related to unusually high defect density of the samples, e.g. defects related to light elements (oxygen and carbon) or metal impurities. Such impurities may contribute considerably to the ionized impurity concentration. Therefore, it is suggested that knowledge of additional parameters to the doping concentration is needed in order to increase the accuracy of Schindler's model.

AB - In this work the measured majority carrier mobility in compensated silicon is compared to values predicted by two different models: Klaassen's model for conventional silicon and the more recent unified model for compensated silicon by Schindler et al (Schindler's model). The purpose of the comparison is to broaden the range of materials included in the newly developed model for compensated materials. As observed previously, the deviation of the prediction by Klaassen's model from the experimental data increases with increasing compensation ratio, RC. It is observed that above a critical RC value (RC > 5.5) the deviation from the measured values is lower for Schindler's model. Occasionally high deviations are observed, which are believed to be related to unusually high defect density of the samples, e.g. defects related to light elements (oxygen and carbon) or metal impurities. Such impurities may contribute considerably to the ionized impurity concentration. Therefore, it is suggested that knowledge of additional parameters to the doping concentration is needed in order to increase the accuracy of Schindler's model.

KW - Compensation

KW - Defects

KW - Mobility

KW - Models

UR - http://www.scopus.com/inward/record.url?scp=85014477126&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2016.07.078

DO - 10.1016/j.egypro.2016.07.078

M3 - Conference contribution

T3 - ENERGY PROCEDIA

SP - 278

EP - 283

BT - Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics

PB - Elsevier Ltd.

ER -

ID: 11363765