Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

  • Song Zhang
  • Chiara Modanese

  • Guilherme Gaspar
  • Rune Søndenå
  • Gabriella Tranell
  • Marisa Di Sabatino

Research units

  • Norwegian University of Science and Technology
  • Institute for Energy Technology

Abstract

In this work the measured majority carrier mobility in compensated silicon is compared to values predicted by two different models: Klaassen's model for conventional silicon and the more recent unified model for compensated silicon by Schindler et al (Schindler's model). The purpose of the comparison is to broaden the range of materials included in the newly developed model for compensated materials. As observed previously, the deviation of the prediction by Klaassen's model from the experimental data increases with increasing compensation ratio, RC. It is observed that above a critical RC value (RC > 5.5) the deviation from the measured values is lower for Schindler's model. Occasionally high deviations are observed, which are believed to be related to unusually high defect density of the samples, e.g. defects related to light elements (oxygen and carbon) or metal impurities. Such impurities may contribute considerably to the ionized impurity concentration. Therefore, it is suggested that knowledge of additional parameters to the doping concentration is needed in order to increase the accuracy of Schindler's model.

Details

Original languageEnglish
Title of host publicationProceedings of the 6th International Conference on Crystalline Silicon Photovoltaics
Subtitle of host publicationSiliconPV 2016
Publication statusPublished - 1 Aug 2016
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Crystalline Silicon Photovoltaics - Chambéry, France
Duration: 7 Mar 20169 Mar 2016
Conference number: 6

Publication series

NameENERGY PROCEDIA
PublisherElsevier
Volume92
ISSN (Electronic)1876-6102

Conference

ConferenceInternational Conference on Crystalline Silicon Photovoltaics
Abbreviated titleSiliconPV
CountryFrance
CityChambéry
Period07/03/201609/03/2016

    Research areas

  • Compensation, Defects, Mobility, Models

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