Magnetite Schottky barriers on GaAs substrates

Steven M. Watts*, Catherine Boothman, Sebastiaan van Dijken, J. M D Coey

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

39 Citations (Scopus)


Carrier transport across Fe3 O4 GaAs interfaces has been studied for n - and p -type GaAs(001) substrates with medium (7.7× 1017 cm-3) to high (3.5× 1018 cm-3) carrier concentrations. Current-voltage (I-V) measurements on medium-doped substrates show a rectifying behavior that is characteristic for thermionic emission/diffusion across a Schottky barrier. The n -type structure exhibits a low ideality factor of 1.3 and a Schottky barrier height of 0.58-0.63 eV. The Schottky barrier height of the p -type sample is 0.51 eV. For Fe3 O4 GaAs structures with higher doping levels the I-V dependence is nearly symmetric. In this case, tunneling of electrons and holes through the Schottky barrier dominates transport between the Fe3 O4 layer and the GaAs substrate.

Original languageEnglish
Article number212108
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed


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