Magnetic Czochralski silicon strip detectors for Super-LHC experiments

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Esa Tuovinen
  • Jaakko Härkönen
  • Panja Luukka
  • Teppo Mäenpää
  • Henri Moilanen
  • Ivan Kassamakov
  • Eija Tuominen

Research units

  • University of Helsinki
  • Aalto University

Abstract

High resistivity and high oxygen concentration of silicon wafers can be beneficial for the radiation hardness of silicon detectors. Wafers of Magnetic Czochralski silicon (MCz-Si) can be grown with a resistivity of a few kΩcm and with well-controlled, high oxygen concentration. According to the beam test results presented in this paper, n-type MCz-Si bulk, p-strip readout detectors with can be operated with acceptable signal-to-noise ratio up to the irradiation fluence of 1×1015 cm-2 1-MeV neutron equivalent. The improved radiation hardness compared to that of traditional p-in-n Float Zone silicon (p-in-n FZ-Si) detectors can be explained by better electric field distribution inside MCz-Si detectors. The difference between the distributions is clearly shown by Transient Current Technique (TCT) measurements, presented in this paper. Thus, strip detectors made on n-type MCz-Si are a feasible option for the outer tracker layers of the potential upgrade of the Large Hadron Collider (LHC), the Super-LHC. This corresponds approximately 95% of the total area of silicon detectors in the Super-LHC.

Details

Original languageEnglish
Pages (from-to)S79-S82
Number of pages4
JournalNUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume636
Issue number1 SUPPL.
Publication statusPublished - 21 Apr 2011
MoE publication typeA1 Journal article-refereed

    Research areas

  • Beam tests, Particle detectors, Radiation hardness, Silicon, Transient current technique

ID: 12977011