Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots

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Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots. / Lipsanen, H.; Sopanen, M.; Ahopelto, J.

In: Physical Review B, Vol. 51, No. 19, 15.05.1995, p. 13868-13871.

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@article{f71976667ab94ad082176b026d4e99a4,
title = "Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots",
abstract = "We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized growth of nanometer-scale InP stressors on the sample surface. The structure is completed in a single growth run using metalorganic vapor-phase epitaxy. Photoluminescence from the dots is redshifted by up to 105 meV from the quantum-well peak due to the lateral confinement of excitons. Clearly resolved luminescence peaks from three excited states separated by 16–20 meV are observed when the quantum well is placed at the depth of 1–10 nm from the surface of the sample. The observed redshift and peak separation are in agreement with simple calculations using a finite-element method and two-dimensional parabolic potential model. This structure is easily fabricated and offers a great potential for the optical study of relaxation and recombination phenomena.",
keywords = "luminescence, quantum dots, semiconductors, luminescence, quantum dots, semiconductors, luminescence, quantum dots, semiconductors",
author = "H. Lipsanen and M. Sopanen and J. Ahopelto",
year = "1995",
month = "5",
day = "15",
doi = "10.1103/PhysRevB.51.13868",
language = "English",
volume = "51",
pages = "13868--13871",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "2469-9950",
publisher = "American Physical Society",
number = "19",

}

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TY - JOUR

T1 - Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots

AU - Lipsanen, H.

AU - Sopanen, M.

AU - Ahopelto, J.

PY - 1995/5/15

Y1 - 1995/5/15

N2 - We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized growth of nanometer-scale InP stressors on the sample surface. The structure is completed in a single growth run using metalorganic vapor-phase epitaxy. Photoluminescence from the dots is redshifted by up to 105 meV from the quantum-well peak due to the lateral confinement of excitons. Clearly resolved luminescence peaks from three excited states separated by 16–20 meV are observed when the quantum well is placed at the depth of 1–10 nm from the surface of the sample. The observed redshift and peak separation are in agreement with simple calculations using a finite-element method and two-dimensional parabolic potential model. This structure is easily fabricated and offers a great potential for the optical study of relaxation and recombination phenomena.

AB - We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized growth of nanometer-scale InP stressors on the sample surface. The structure is completed in a single growth run using metalorganic vapor-phase epitaxy. Photoluminescence from the dots is redshifted by up to 105 meV from the quantum-well peak due to the lateral confinement of excitons. Clearly resolved luminescence peaks from three excited states separated by 16–20 meV are observed when the quantum well is placed at the depth of 1–10 nm from the surface of the sample. The observed redshift and peak separation are in agreement with simple calculations using a finite-element method and two-dimensional parabolic potential model. This structure is easily fabricated and offers a great potential for the optical study of relaxation and recombination phenomena.

KW - luminescence

KW - quantum dots

KW - semiconductors

KW - luminescence

KW - quantum dots

KW - semiconductors

KW - luminescence

KW - quantum dots

KW - semiconductors

U2 - 10.1103/PhysRevB.51.13868

DO - 10.1103/PhysRevB.51.13868

M3 - Article

VL - 51

SP - 13868

EP - 13871

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 2469-9950

IS - 19

ER -

ID: 4869111