Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • VTT Technical Research Centre of Finland

Abstract

We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized growth of nanometer-scale InP stressors on the sample surface. The structure is completed in a single growth run using metalorganic vapor-phase epitaxy. Photoluminescence from the dots is redshifted by up to 105 meV from the quantum-well peak due to the lateral confinement of excitons. Clearly resolved luminescence peaks from three excited states separated by 16–20 meV are observed when the quantum well is placed at the depth of 1–10 nm from the surface of the sample. The observed redshift and peak separation are in agreement with simple calculations using a finite-element method and two-dimensional parabolic potential model. This structure is easily fabricated and offers a great potential for the optical study of relaxation and recombination phenomena.

Details

Original languageEnglish
Pages (from-to)13868-13871
Number of pages4
JournalPhysical Review B
Volume51
Issue number19
Publication statusPublished - 15 May 1995
MoE publication typeA1 Journal article-refereed

    Research areas

  • luminescence, quantum dots, semiconductors

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