Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO 2 Using Carbon Dioxide

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Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO 2 Using Carbon Dioxide. / Zhu, Zhen; Sippola, Perttu; Ylivaara, Oili M.E.; Modanese, Chiara; Di Sabatino, Marisa; Mizohata, Kenichiro; Merdes, Saoussen; Lipsanen, Harri; Savin, Hele.

In: Nanoscale Research Letters, Vol. 14, 55, 12.02.2019.

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Zhu, Zhen ; Sippola, Perttu ; Ylivaara, Oili M.E. ; Modanese, Chiara ; Di Sabatino, Marisa ; Mizohata, Kenichiro ; Merdes, Saoussen ; Lipsanen, Harri ; Savin, Hele. / Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO 2 Using Carbon Dioxide. In: Nanoscale Research Letters. 2019 ; Vol. 14.

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@article{924573147aa64eeba0e20372ec57c9f1,
title = "Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO 2 Using Carbon Dioxide",
abstract = "In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 degrees C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of similar to 1.15 angstrom/cycle showed a density of similar to 2.1g/cm(3), a refractive index of similar to 1.46 at a wavelength of 632nm, and a low tensile residual stress of similar to 30MPa. Furthermore, the films showed low impurity levels with bulk concentrations of similar to 2.4 and similar to 0.17at. {\%} for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.",
keywords = "ALD, Carbon dioxide, Oxidation, Plasma, Radicals, Silicon dioxide",
author = "Zhen Zhu and Perttu Sippola and Ylivaara, {Oili M.E.} and Chiara Modanese and {Di Sabatino}, Marisa and Kenichiro Mizohata and Saoussen Merdes and Harri Lipsanen and Hele Savin",
year = "2019",
month = "2",
day = "12",
doi = "10.1186/s11671-019-2889-y",
language = "English",
volume = "14",
journal = "Nanoscale Research Letters",
issn = "1931-7573",

}

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TY - JOUR

T1 - Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO 2 Using Carbon Dioxide

AU - Zhu, Zhen

AU - Sippola, Perttu

AU - Ylivaara, Oili M.E.

AU - Modanese, Chiara

AU - Di Sabatino, Marisa

AU - Mizohata, Kenichiro

AU - Merdes, Saoussen

AU - Lipsanen, Harri

AU - Savin, Hele

PY - 2019/2/12

Y1 - 2019/2/12

N2 - In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 degrees C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of similar to 1.15 angstrom/cycle showed a density of similar to 2.1g/cm(3), a refractive index of similar to 1.46 at a wavelength of 632nm, and a low tensile residual stress of similar to 30MPa. Furthermore, the films showed low impurity levels with bulk concentrations of similar to 2.4 and similar to 0.17at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

AB - In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 degrees C using CO2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO2 films were investigated. SiO2 films having a saturated growth-per-cycle of similar to 1.15 angstrom/cycle showed a density of similar to 2.1g/cm(3), a refractive index of similar to 1.46 at a wavelength of 632nm, and a low tensile residual stress of similar to 30MPa. Furthermore, the films showed low impurity levels with bulk concentrations of similar to 2.4 and similar to 0.17at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

KW - ALD

KW - Carbon dioxide

KW - Oxidation

KW - Plasma

KW - Radicals

KW - Silicon dioxide

UR - http://www.scopus.com/inward/record.url?scp=85061584351&partnerID=8YFLogxK

U2 - 10.1186/s11671-019-2889-y

DO - 10.1186/s11671-019-2889-y

M3 - Article

VL - 14

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

SN - 1931-7573

M1 - 55

ER -

ID: 32241122