Low-T anneal as cure for LeTID in Mc-Si PERC cells
Research output: Contribution to journal › Conference article › Scientific › peer-review
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Abstract
fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long
anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation
and discuss the possibility of metals being involved in LeTID mechanism.
Details
Original language | English |
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Article number | 140013 |
Journal | AIP CONFERENCE PROCEEDINGS |
Volume | 2147 |
Issue number | 1 |
Publication status | Published - 27 Aug 2019 |
MoE publication type | A4 Article in a conference publication |
Event | International Conference on Crystalline Silicon Photovoltaics - Leuven, Belgium Duration: 8 Apr 2019 → 10 Apr 2019 Conference number: 9 https://www.siliconpv.com/home/ |
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