Low-temperature processes for MEMS device fabrication

Jyrki Kiihamäki*, Hannu Kattelus, Martti Blomberg, Riikka Puurunen, Mari Laamanen, Panu Pekko, Jaakko Saarilahti, Heini Ritala, Anna Rissanen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterScientificpeer-review

6 Citations (Scopus)

Abstract

The high temperatures typical in semiconductor and conventional MEMS fabrication limit the material choices in MEMS structures. This paper reviews some of the low-temperature processes and techniques available for MEMS fabrication and describes some characteristics of these techniques and practical process examples. The techniques described are plasma-enhanced chemical vapour deposition, atomic layer deposition, reactive sputtering, vapour phase hydrofluoric acid etching of low-temperature oxides, and low-temperature wafer bonding. As a practical example of the use of these techniques, the basic characteristics of a MEMS switch and other devices fabricated at VTT are presented.

Original languageEnglish
Title of host publicationAdvanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators
Pages167-178
Number of pages12
DOIs
Publication statusPublished - 2010
MoE publication typeA3 Part of a book or another research book

Publication series

NameNATO Science for Peace and Security Series B: Physics and Biophysics
ISSN (Print)18746500

Keywords

  • Amorphous etals
  • Fusion bonding
  • HF-vapour etching
  • MEMS
  • Thin film technology

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