Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

F. Emadi*, Shenyi Liu, Anton Klami, N. Tiwary, V. Vuorinen, M. Paulasto-Krockel

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)
14 Downloads (Pure)

Abstract

Based on the finite element (FE) simulations done in this work, lowering the bonding temperature significantly decreases the bonding induced residual stresses. Therefore, low temperature Cu-Sn-In SLID process was utilized to bond Si to Si and Si to sapphire under various bonding conditions. The microstructural evolution and the (thermo-) mechanical properties of the joints were studied. The results showed that the Cu-Sn-In SLID bonds composed of a single Cu6(Sn, In)5 IMC phase with high joint strength. Furthermore, the hardness and Young's modulus of Cu6(Sn, In)5 formed in the SLID bonding were measured to be slightly higher than that of binary Cu6Sn5.

Original languageEnglish
Title of host publicationASDAM 2022 - Proceedings
Subtitle of host publication14th International Conference on Advanced Semiconductor Devices and Microsystems
EditorsJuraj Marek, Daniel Donoval, Erik Vavrinsky
PublisherIEEE
Number of pages6
ISBN (Electronic)978-1-6654-6977-7
DOIs
Publication statusPublished - 2022
MoE publication typeA4 Conference publication
EventInternational Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia
Duration: 23 Oct 202226 Oct 2022

Publication series

NameConference proceedings (International conference on advanced semiconductor devices and microsystems)
ISSN (Print)2475-2916
ISSN (Electronic)2474-9737

Conference

ConferenceInternational Conference on Advanced Semiconductor Devices and Microsystems
Abbreviated titleASDAM
Country/TerritorySlovakia
CitySmolenice
Period23/10/202226/10/2022

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