Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

F. Emadi; S. Liu; Anton Klami; N. Tiwary; V. Vuorinen; M. Paulasto-Krockel

doi:10.1109/ASDAM55965.2022.9966765

Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

F. Emadi^*, S. Liu, Anton Klami, N. Tiwary, V. Vuorinen, M. Paulasto-Krockel

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Abstract

Based on the finite element (FE) simulations done in this work, lowering the bonding temperature significantly decreases the bonding induced residual stresses. Therefore, low temperature Cu-Sn-In SLID process was utilized to bond Si to Si and Si to sapphire under various bonding conditions. The microstructural evolution and the (thermo-) mechanical properties of the joints were studied. The results showed that the Cu-Sn-In SLID bonds composed of a single Cu6(Sn, In)5 IMC phase with high joint strength. Furthermore, the hardness and Young's modulus of Cu6(Sn, In)5 formed in the SLID bonding were measured to be slightly higher than that of binary Cu6Sn5.

Original language	English
Title of host publication	ASDAM 2022 - Proceedings
Subtitle of host publication	14th International Conference on Advanced Semiconductor Devices and Microsystems
Editors	Juraj Marek, Daniel Donoval, Erik Vavrinsky
Publisher	IEEE
Number of pages	6
ISBN (Electronic)	978-1-6654-6977-7
DOIs	https://doi.org/10.1109/ASDAM55965.2022.9966765
Publication status	Published - 2022
MoE publication type	A4 Article in a conference publication
Event	International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice, Slovakia Duration: 23 Oct 2022 → 26 Oct 2022

Publication series

Name	Conference proceedings (International conference on advanced semiconductor devices and microsystems)
ISSN (Print)	2475-2916
ISSN (Electronic)	2474-9737

Conference

Conference	International Conference on Advanced Semiconductor Devices and Microsystems
Abbreviated title	ASDAM
Country/Territory	Slovakia
City	Smolenice
Period	23/10/2022 → 26/10/2022

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10.1109/ASDAM55965.2022.9966765

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Emadi, F., Liu, S., Klami, A., Tiwary, N., Vuorinen, V., & Paulasto-Krockel, M. (2022). Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding. In J. Marek, D. Donoval, & E. Vavrinsky (Eds.), ASDAM 2022 - Proceedings: 14th International Conference on Advanced Semiconductor Devices and Microsystems (Conference proceedings (International conference on advanced semiconductor devices and microsystems)). IEEE. https://doi.org/10.1109/ASDAM55965.2022.9966765

Emadi, F. ; Liu, S. ; Klami, Anton et al. / Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding. ASDAM 2022 - Proceedings: 14th International Conference on Advanced Semiconductor Devices and Microsystems. editor / Juraj Marek ; Daniel Donoval ; Erik Vavrinsky. IEEE, 2022. (Conference proceedings (International conference on advanced semiconductor devices and microsystems)).

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title = "Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding",

abstract = "Based on the finite element (FE) simulations done in this work, lowering the bonding temperature significantly decreases the bonding induced residual stresses. Therefore, low temperature Cu-Sn-In SLID process was utilized to bond Si to Si and Si to sapphire under various bonding conditions. The microstructural evolution and the (thermo-) mechanical properties of the joints were studied. The results showed that the Cu-Sn-In SLID bonds composed of a single Cu6(Sn, In)5 IMC phase with high joint strength. Furthermore, the hardness and Young's modulus of Cu6(Sn, In)5 formed in the SLID bonding were measured to be slightly higher than that of binary Cu6Sn5.",

author = "F. Emadi and S. Liu and Anton Klami and N. Tiwary and V. Vuorinen and M. Paulasto-Krockel",

note = "Funding Information: This work has been funded by iRel40. iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under grant agreement No 876659. The funding of the project comes from the Horizon 2020 research programme and participating countries. National funding is provided by Germany, Austria, Belgium, Finland (Innovation Funding Agency, Business Finland), France, Italy, the Netherlands, Slovakia, Spain, Sweden, and Turkey. Publisher Copyright: {\textcopyright} 2022 IEEE. | openaire: EC/HE/876659/EU//iRel40; International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM ; Conference date: 23-10-2022 Through 26-10-2022",

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doi = "10.1109/ASDAM55965.2022.9966765",

language = "English",

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Emadi, F, Liu, S, Klami, A, Tiwary, N , Vuorinen, V & Paulasto-Krockel, M 2022, Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding. in J Marek, D Donoval & E Vavrinsky (eds), ASDAM 2022 - Proceedings: 14th International Conference on Advanced Semiconductor Devices and Microsystems. Conference proceedings (International conference on advanced semiconductor devices and microsystems), IEEE, International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, Slovakia, 23/10/2022. https://doi.org/10.1109/ASDAM55965.2022.9966765

Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding. / Emadi, F.; Liu, S.; Klami, Anton et al.

ASDAM 2022 - Proceedings: 14th International Conference on Advanced Semiconductor Devices and Microsystems. ed. / Juraj Marek; Daniel Donoval; Erik Vavrinsky. IEEE, 2022. (Conference proceedings (International conference on advanced semiconductor devices and microsystems)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

AU - Emadi, F.

AU - Liu, S.

AU - Klami, Anton

AU - Tiwary, N.

AU - Vuorinen, V.

AU - Paulasto-Krockel, M.

N1 - Funding Information: This work has been funded by iRel40. iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under grant agreement No 876659. The funding of the project comes from the Horizon 2020 research programme and participating countries. National funding is provided by Germany, Austria, Belgium, Finland (Innovation Funding Agency, Business Finland), France, Italy, the Netherlands, Slovakia, Spain, Sweden, and Turkey. Publisher Copyright: © 2022 IEEE. | openaire: EC/HE/876659/EU//iRel40

PY - 2022

Y1 - 2022

N2 - Based on the finite element (FE) simulations done in this work, lowering the bonding temperature significantly decreases the bonding induced residual stresses. Therefore, low temperature Cu-Sn-In SLID process was utilized to bond Si to Si and Si to sapphire under various bonding conditions. The microstructural evolution and the (thermo-) mechanical properties of the joints were studied. The results showed that the Cu-Sn-In SLID bonds composed of a single Cu6(Sn, In)5 IMC phase with high joint strength. Furthermore, the hardness and Young's modulus of Cu6(Sn, In)5 formed in the SLID bonding were measured to be slightly higher than that of binary Cu6Sn5.

AB - Based on the finite element (FE) simulations done in this work, lowering the bonding temperature significantly decreases the bonding induced residual stresses. Therefore, low temperature Cu-Sn-In SLID process was utilized to bond Si to Si and Si to sapphire under various bonding conditions. The microstructural evolution and the (thermo-) mechanical properties of the joints were studied. The results showed that the Cu-Sn-In SLID bonds composed of a single Cu6(Sn, In)5 IMC phase with high joint strength. Furthermore, the hardness and Young's modulus of Cu6(Sn, In)5 formed in the SLID bonding were measured to be slightly higher than that of binary Cu6Sn5.

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A2 - Vavrinsky, Erik

PB - IEEE

T2 - International Conference on Advanced Semiconductor Devices and Microsystems

Y2 - 23 October 2022 through 26 October 2022

ER -

Emadi F, Liu S, Klami A, Tiwary N , Vuorinen V , Paulasto-Krockel M. Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding. In Marek J, Donoval D, Vavrinsky E, editors, ASDAM 2022 - Proceedings: 14th International Conference on Advanced Semiconductor Devices and Microsystems. IEEE. 2022. (Conference proceedings (International conference on advanced semiconductor devices and microsystems)). doi: 10.1109/ASDAM55965.2022.9966765

Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

Abstract

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iRel40: Intelligent Reliability 4.0

OtaNano - Nanofab

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Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

Abstract

Publication series

Conference

Access to Document

OpenUrl availability

Other files and links

Fingerprint

Projects

iRel40: Intelligent Reliability 4.0

Equipment

OtaNano - Nanofab

Cite this