Projects per year
We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10 and ozone as precursors to fabricate crystalline α-Mn2O3 and Mn3O4 thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60-100 °C and the latter in the range 120-160 °C. In both cases an appreciably high growth rate of ∼1.2 Å per cycle is achieved. The spinel-structured Mn3O4 thin films are shown to be ferrimagnetic with the transition temperature determined to be at ∼47 K.
Hagen, D., Khayyami, A., Marin, G., Ghazy, A., Nisula, M., Johansson, L., Safdar, M., Krahl, F., Thomas, C., Medina, E., Tiittanen, T., Giedraityte, Z., Heiska, J., Lepikko, S., Karppinen, M., Haggren, A., Tripathi, T., Multia, J., Philip, A., Srivastava, D., Aleksandrova, I., Mustonen, O., Jin, H. & Ahvenniemi, E.
23/12/2013 → 24/05/2019
Project: EU: ERC grants