Low-temperature atomic layer deposition of crystalline manganese oxide thin films

Hua Jin, Dirk Hagen, Maarit Karppinen*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)
240 Downloads (Pure)


We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10 and ozone as precursors to fabricate crystalline α-Mn2O3 and Mn3O4 thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60-100 °C and the latter in the range 120-160 °C. In both cases an appreciably high growth rate of ∼1.2 Å per cycle is achieved. The spinel-structured Mn3O4 thin films are shown to be ferrimagnetic with the transition temperature determined to be at ∼47 K.

Original languageEnglish
Pages (from-to)18737-18741
Number of pages5
JournalDalton Transactions
Issue number46
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed


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