Low temperature and high quality atomic layer deposition HfO2 coatings

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication2017 IMAPS Nordic Conference on Microelectronics Packaging, NordPac 2017
Publication statusPublished - 26 Jul 2017
MoE publication typeA4 Article in a conference publication
EventInternational Microelectronics and Packaging Society Nordic Annual Conference - Göteborg, Sweden
Duration: 18 Jun 201720 Jun 2017

Conference

ConferenceInternational Microelectronics and Packaging Society Nordic Annual Conference
Abbreviated titleIMAPS
CountrySweden
CityGöteborg
Period18/06/201720/06/2017

Researchers

Research units

  • Instituto Nazionale per la Fisica della Materia
  • Summa Semiconductor Oy

Abstract

Low temperature high quality thermal atomic layer deposition (ALD) HfO2 process has been developed and characterized using different oxidant sources - water, water-ozone, and ozone. Despite a low deposition temperature of 170 °C, the coatings are shown to be exhibit high optical quality, good barrier properties, environmentally stable, low impurity concentration, and other desirable material properties. The water-based process was shown to produce the highest quality coatings in terms of density, purity and stoichiometry. Using various complimentary characterization techniques on hafnia coatings deposited atop silicon, including X-ray reflectivity (XRR); ultraviolet-visible reflectometry; time-of-flight secondary ion mass spectroscopy (TOF-SIMS); and X-ray photoelectron spectroscopy (XPS) measurements, the coatings are shown to be of high quality. The developed ALD hafnia processes have exceptionally good control over layer thickness with uniformed coatings reproducibly demonstrated on 150 mm silicon wafers. Due to the exceptionally low extinction coefficient, ALD hafnia coatings of varying thickness were measured atop silicon to study the coatings anti-reflectivity behavior in the mid-ultraviolet region. The anti-reflectance performance of these single-layer coatings compares to or exceeds the performance of other reported single layer coatings. Importantly, unlike other coating technologies these ALD coatings are guaranteed to be continuous, pinhole-free and dense despite being thin (< 15nm).

    Research areas

  • atomic layer deposition, coating, HfO, optical coating, TDMAH, thin film

ID: 15293877