Low-T anneal as cure for LeTID in Mc-Si PERC cells

Marko Yli-Koski; Toni P. Pasanen; Ismo Heikkinen; Michael Serué; Hele Savin

doi:10.1063/1.5123900

Low-T anneal as cure for LeTID in Mc-Si PERC cells

Marko Yli-Koski, Toni P. Pasanen, Ismo Heikkinen, Michael Serué, Hele Savin

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

6 Citations (Scopus)

108 Downloads (Pure)

Abstract

Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on
fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long
anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation
and discuss the possibility of metals being involved in LeTID mechanism.

Original language	English
Title of host publication	SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics
Publisher	AIP Publishing
Volume	2147
Edition	1
ISBN (Electronic)	978-0-7354-1892-9
DOIs	https://doi.org/10.1063/1.5123900
Publication status	Published - 27 Aug 2019
MoE publication type	A4 Conference publication
Event	International Conference on Crystalline Silicon Photovoltaics - Leuven, Belgium Duration: 8 Apr 2019 → 10 Apr 2019 Conference number: 9 https://www.siliconpv.com/home/

Publication series

Name	AIP Conference Proceedings
Publisher	American Institute of Physics
ISSN (Print)	0094-243X

Conference

Conference	International Conference on Crystalline Silicon Photovoltaics
Abbreviated title	SiliconPV
Country/Territory	Belgium
City	Leuven
Period	08/04/2019 → 10/04/2019
Internet address	https://www.siliconpv.com/home/

Access to Document

10.1063/1.5123900

SiPV2019_proceedings_Low_T_anneal_as_cure_for_LeTID_in_mc_Si_PERC_cellsAccepted author manuscript, 530 KB

Riddle of light induced degradation in silicon photovoltaics
Savin, H. (Principal investigator)
01/12/2012 → 31/12/2017
Project: EU: ERC grants

OtaNano
Rissanen, A. (Manager)
Aalto University
Facility/equipment: Facility
OtaNano - Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Facility/equipment: Facility

Cite this

@inproceedings{87ae6cf46bc3497181b991c0615d5d08,

title = "Low-T anneal as cure for LeTID in Mc-Si PERC cells",

abstract = "Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism. ",

author = "Marko Yli-Koski and Pasanen, {Toni P.} and Ismo Heikkinen and Michael Seru{\'e} and Hele Savin",

note = "| openaire: EC/FP7/307315/EU//SOLARX; International Conference on Crystalline Silicon Photovoltaics, SiliconPV ; Conference date: 08-04-2019 Through 10-04-2019",

year = "2019",

month = aug,

day = "27",

doi = "10.1063/1.5123900",

language = "English",

volume = "2147",

series = "AIP Conference Proceedings",

publisher = "AIP Publishing",

booktitle = "SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics",

address = "United States",

edition = "1",

url = "https://www.siliconpv.com/home/",

}

Yli-Koski, M, Pasanen, TP, Heikkinen, I, Serué, M & Savin, H 2019, Low-T anneal as cure for LeTID in Mc-Si PERC cells. in SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. 1 edn, vol. 2147, AIP Conference Proceedings, AIP Publishing, International Conference on Crystalline Silicon Photovoltaics, Leuven, Belgium, 08/04/2019. https://doi.org/10.1063/1.5123900

Low-T anneal as cure for LeTID in Mc-Si PERC cells. / Yli-Koski, Marko; Pasanen, Toni P.; Heikkinen, Ismo et al.
SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Vol. 2147 1. ed. AIP Publishing, 2019. (AIP Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Low-T anneal as cure for LeTID in Mc-Si PERC cells

AU - Yli-Koski, Marko

AU - Pasanen, Toni P.

AU - Heikkinen, Ismo

AU - Serué, Michael

AU - Savin, Hele

N1 - Conference code: 9

PY - 2019/8/27

Y1 - 2019/8/27

N2 - Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism.

AB - Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism.

U2 - 10.1063/1.5123900

DO - 10.1063/1.5123900

M3 - Conference article in proceedings

VL - 2147

T3 - AIP Conference Proceedings

BT - SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics

PB - AIP Publishing

T2 - International Conference on Crystalline Silicon Photovoltaics

Y2 - 8 April 2019 through 10 April 2019

ER -

Low-T anneal as cure for LeTID in Mc-Si PERC cells

Abstract

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Riddle of light induced degradation in silicon photovoltaics

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