Low-T anneal as cure for LeTID in Mc-Si PERC cells

Marko Yli-Koski, Toni P. Pasanen, Ismo Heikkinen, Michael Serué, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

5 Citations (Scopus)
112 Downloads (Pure)


Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on
fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long
anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation
and discuss the possibility of metals being involved in LeTID mechanism.
Original languageEnglish
Title of host publicationSiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics
PublisherAIP Publishing
ISBN (Electronic)978-0-7354-1892-9
Publication statusPublished - 27 Aug 2019
MoE publication typeA4 Conference publication
EventInternational Conference on Crystalline Silicon Photovoltaics - Leuven, Belgium
Duration: 8 Apr 201910 Apr 2019
Conference number: 9

Publication series

NameAIP Conference Proceedings
PublisherAmerican Institute of Physics
ISSN (Print)0094-243X


ConferenceInternational Conference on Crystalline Silicon Photovoltaics
Abbreviated titleSiliconPV
Internet address


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