Low-T anneal as cure for LeTID in Mc-Si PERC cells

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Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on
fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long
anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation
and discuss the possibility of metals being involved in LeTID mechanism.
Original languageEnglish
Article number140013
Issue number1
Publication statusPublished - 27 Aug 2019
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Crystalline Silicon Photovoltaics - Leuven, Belgium
Duration: 8 Apr 201910 Apr 2019
Conference number: 9


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