Low Noise FET Frequency Doubler Design Using (P)HEMT and MESFET Technologies

P. Alinikula, V. Porra

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationInternational IEEE Workshop on Experimentally Based FET Device Modelling & Related Nonlinear Circuit Design, University of Kassel Germany, July 1997
    Pages29
    Publication statusPublished - 1997
    MoE publication typeA4 Article in a conference publication

    Keywords

    • frequency doubler
    • low noise FET

    Cite this