Low noise amplifier MMICs for 325 GHz radiometric applications

S. Diebold, J. Kuhn, A. Hulsmann, A. Leuther, K. Dahlberg, Petri Jukkala, M. Kantanen, I. Kallfass, T. Zwick, T. Narhi

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    1 Citation (Scopus)

    Abstract

    For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range.

    Original languageEnglish
    Title of host publication2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
    PublisherIEEE
    Pages151-153
    Number of pages3
    ISBN (Electronic)9784902339314
    Publication statusPublished - 25 Mar 2014
    MoE publication typeA4 Article in a conference publication
    EventAsia-Pacific Microwave Conference - Sendai, Japan
    Duration: 4 Nov 20147 Nov 2014

    Publication series

    NameAsia Pacific Microwave Conference-Proceedings

    Conference

    ConferenceAsia-Pacific Microwave Conference
    Abbreviated titleAPMC
    CountryJapan
    CitySendai
    Period04/11/201407/11/2014

    Keywords

    • Cascode configuration
    • Common-source transistors
    • HEMTs
    • LNA
    • Low noise amplifiers
    • Microwave amplifiers
    • Millimeter wave devices
    • Millimeter wave integrated circuits
    • MMIC amplifiers
    • MMICs
    • Noise figure (NF)
    • Sub-millimeter-wave amplifier

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