Low-load indentation behavior of HfN thin films deposited by reactive rf sputtering

R. Nowak, C. L. Li, S. Maruno

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Deformation of HfN thin films deposited by the reactive sputtering method on silicon and alumina substrates has been investigated using depth-sensing indentation. The experiments performed in a low load range (2-50 mN) revealed that even extremely shallow indentations were affected by the elastic/plastic response of the substrate. The analysis of the shape of the indentation load-depth hysteresis loops and of conventional hardness data was supplemented by considerations based on the recently proposed energy principle of indentation.

Original languageEnglish
Pages (from-to)64-69
Number of pages6
JournalJournal of Materials Research
Volume12
Issue number1
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

Keywords

  • SURFACE DEFORMATION
  • HARDNESS MEASUREMENTS
  • ENERGY PRINCIPLE
  • HAFNIUM NITRIDE
  • COATINGS
  • SILICON
  • SAPPHIRE
  • TIN

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