Low energy electron beam induced vacancy activation in GaN

Henri Nykänen, Sami Suihkonen, Lukasz Kilanski, Markku Sopanen, Filip Tuomisto

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Abstract

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5–20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive VGa-Hn complexes that can be activated by H removal during low energy electron irradiation.
Original languageEnglish
Article number122105
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number12
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • electron beam effects
  • gallium compounds
  • III-V semiconductors
  • MOCVD
  • photoluminescence
  • positron annihilation
  • scanning electron microscopy
  • semiconductor epitaxial layers
  • semiconductor growth
  • vacancies (crystal)
  • vapour phase epitaxial growth

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