Low energy electron beam induced damage on gallium nitride based materials

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Abstract

We present our studies on low energy electron beam induced damage to gallium nitride semiconductor material. We have observed a clear reduction in InGaN single quantum well and bulk GaN band-to-band emission intensity induced by low energy electron beam irradiation. The dose and energy of the e-beam were 0 - 500 μC/cm 2 and of 5 - 20 keV, respectively. We attributed the damage mechanism to electron beam induced defect electromigration. The electromigration is caused by a localized electric field generated by high local current density. However, further studies are needed to confirm the damage mechanism. These results should be considered in electron beam related fabrication, characterization and usage of GaN-based materials. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Details

Original languageEnglish
Pages (from-to)1563-1565
Number of pages3
JournalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Volume9
Issue number7
Publication statusPublished - Jul 2012
MoE publication typeA1 Journal article-refereed

    Research areas

  • Damage, Electron beam, Gallium nitride, PL intensity

ID: 853516