We present our studies on low energy electron beam induced damage to gallium nitride semiconductor material. We have observed a clear reduction in InGaN single quantum well and bulk GaN band-to-band emission intensity induced by low energy electron beam irradiation. The dose and energy of the e-beam were 0 - 500 μC/cm 2 and of 5 - 20 keV, respectively. We attributed the damage mechanism to electron beam induced defect electromigration. The electromigration is caused by a localized electric field generated by high local current density. However, further studies are needed to confirm the damage mechanism. These results should be considered in electron beam related fabrication, characterization and usage of GaN-based materials. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Number of pages||3|
|Journal||PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS|
|Publication status||Published - Jul 2012|
|MoE publication type||A1 Journal article-refereed|
- Electron beam
- Gallium nitride
- PL intensity