Long-term stability of Al2O3 passivated black silicon

Eric Calle, Pablo Ortega, Guillaume von Gastrow, Isidro Martin, Hele Savin, Ramon Alcubilla

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

7 Citations (Scopus)
93 Downloads (Pure)


In this work we report on the long-term stability of black silicon surfaces passivated with atomic layer deposited (ALD) 20 nm thick Al2O3 films on p- and n-type FZ c-Si substrates. The results are directly compared with random pyramid textured counterparts. The effective surface recombination velocity Seff has been measured within a time frame of one year after activation of surface passivation. The results demonstrate that after an initial slight degradation during the first month Seff values stabilize around 45 and 25 cm/s on p- and n-type black silicon samples, respectively. These values are enough to guarantee stable high efficiency in interdigitated back-contacted (IBC) c-Si(n) solar cells (> 24.5%) using black silicon nanostructures on the front side. Similar, although weaker, losses are also observed in surface passivation on textured samples covered by Al2O3 with equal thickness, indicating that the origin of the instability might be independent of surface morphology.
Original languageEnglish
Title of host publicationProceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)
Number of pages6
Publication statusPublished - 2016
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Crystalline Silicon Photovoltaics - Chambéry, France
Duration: 7 Mar 20169 Mar 2016
Conference number: 6

Publication series

ISSN (Electronic)1876-6102


ConferenceInternational Conference on Crystalline Silicon Photovoltaics
Abbreviated titleSiliconPV


  • Black silicon
  • Nano-texturing
  • Surface passivation
  • Lifetime
  • Atomic layer deposition
  • Al2O3
  • Solar cells


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