Long term charge relaxation in silicon single electron transistors

A Savin; A Manninen; P Kivinen; J Pekola; M Prunnila; J Ahopelto; M Kamp; M Emmerling; A Forchel

doi:10.1142/9789812810076_0082

Long term charge relaxation in silicon single electron transistors

A Savin^*, A Manninen, P Kivinen, J Pekola, M Prunnila, J Ahopelto, M Kamp, M Emmerling, A Forchel

^*Corresponding author for this work

Not published at Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Silicon single electron transistors with a side gate have been fabricated on a heavily doped silicon-on-insulator substrate. I-V characteristics of all devices have a Coulomb blockade region. Electrical conductivity of single electron transistors demonstrates long term relaxation after cooling to 4.2 K, At temperatures below 20 K long-term relaxation of the source-drain current after switching of the gate voltage has been observed.

Original language	English
Title of host publication	Physics, Chemistry and Application of Nanostructures
Subtitle of host publication	Reviews and Short Notes to NANOMEETING-2001
Editors	VE Borisenko, SV Gaponenko, VS Gurin
Publisher	World Scientific
Pages	466-469
Number of pages	4
ISBN (Electronic)	978-981-4491-06-8
ISBN (Print)	978-981-02-4618-1
DOIs	https://doi.org/10.1142/9789812810076_0082
Publication status	Published - Apr 2001
MoE publication type	A4 Conference publication
Event	International Conference on Physics, Chemistry and Application of Nanostructures - Minsk, Belarus Duration: 22 May 2001 → 25 May 2001

Conference

Conference	International Conference on Physics, Chemistry and Application of Nanostructures
Country/Territory	Belarus
City	Minsk
Period	22/05/2001 → 25/05/2001

Keywords

ROOM-TEMPERATURE
QUANTUM-DOT
MEMORY
GAIN

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10.1142/9789812810076_0082

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Savin, A., Manninen, A., Kivinen, P., Pekola, J., Prunnila, M., Ahopelto, J., Kamp, M., Emmerling, M., & Forchel, A. (2001). Long term charge relaxation in silicon single electron transistors. In VE. Borisenko, SV. Gaponenko, & VS. Gurin (Eds.), Physics, Chemistry and Application of Nanostructures : Reviews and Short Notes to NANOMEETING-2001 (pp. 466-469). World Scientific. https://doi.org/10.1142/9789812810076_0082

@inproceedings{62c8e134ba994f58aa1051ce675ae42d,

title = "Long term charge relaxation in silicon single electron transistors",

abstract = "Silicon single electron transistors with a side gate have been fabricated on a heavily doped silicon-on-insulator substrate. I-V characteristics of all devices have a Coulomb blockade region. Electrical conductivity of single electron transistors demonstrates long term relaxation after cooling to 4.2 K, At temperatures below 20 K long-term relaxation of the source-drain current after switching of the gate voltage has been observed.",

keywords = "ROOM-TEMPERATURE, QUANTUM-DOT, MEMORY, GAIN",

author = "A Savin and A Manninen and P Kivinen and J Pekola and M Prunnila and J Ahopelto and M Kamp and M Emmerling and A Forchel",

year = "2001",

month = apr,

doi = "10.1142/9789812810076_0082",

language = "English",

isbn = "978-981-02-4618-1 ",

pages = "466--469",

editor = "VE Borisenko and SV Gaponenko and VS Gurin",

booktitle = "Physics, Chemistry and Application of Nanostructures",

publisher = "World Scientific",

address = "United States",

note = "International Conference on Physics, Chemistry and Application of Nanostructures ; Conference date: 22-05-2001 Through 25-05-2001",

}

Savin, A, Manninen, A, Kivinen, P, Pekola, J, Prunnila, M, Ahopelto, J, Kamp, M, Emmerling, M & Forchel, A 2001, Long term charge relaxation in silicon single electron transistors. in VE Borisenko, SV Gaponenko & VS Gurin (eds), Physics, Chemistry and Application of Nanostructures : Reviews and Short Notes to NANOMEETING-2001. World Scientific, pp. 466-469, International Conference on Physics, Chemistry and Application of Nanostructures, Minsk, Belarus, 22/05/2001. https://doi.org/10.1142/9789812810076_0082

Long term charge relaxation in silicon single electron transistors. / Savin, A; Manninen, A; Kivinen, P et al.
Physics, Chemistry and Application of Nanostructures : Reviews and Short Notes to NANOMEETING-2001. ed. / VE Borisenko; SV Gaponenko; VS Gurin. World Scientific, 2001. p. 466-469.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Long term charge relaxation in silicon single electron transistors

AU - Savin, A

AU - Manninen, A

AU - Kivinen, P

AU - Pekola, J

AU - Prunnila, M

AU - Ahopelto, J

AU - Kamp, M

AU - Emmerling, M

AU - Forchel, A

PY - 2001/4

Y1 - 2001/4

N2 - Silicon single electron transistors with a side gate have been fabricated on a heavily doped silicon-on-insulator substrate. I-V characteristics of all devices have a Coulomb blockade region. Electrical conductivity of single electron transistors demonstrates long term relaxation after cooling to 4.2 K, At temperatures below 20 K long-term relaxation of the source-drain current after switching of the gate voltage has been observed.

AB - Silicon single electron transistors with a side gate have been fabricated on a heavily doped silicon-on-insulator substrate. I-V characteristics of all devices have a Coulomb blockade region. Electrical conductivity of single electron transistors demonstrates long term relaxation after cooling to 4.2 K, At temperatures below 20 K long-term relaxation of the source-drain current after switching of the gate voltage has been observed.

KW - ROOM-TEMPERATURE

KW - QUANTUM-DOT

KW - MEMORY

KW - GAIN

U2 - 10.1142/9789812810076_0082

DO - 10.1142/9789812810076_0082

M3 - Conference article in proceedings

SN - 978-981-02-4618-1

SP - 466

EP - 469

BT - Physics, Chemistry and Application of Nanostructures

A2 - Borisenko, VE

A2 - Gaponenko, SV

A2 - Gurin, VS

PB - World Scientific

T2 - International Conference on Physics, Chemistry and Application of Nanostructures

Y2 - 22 May 2001 through 25 May 2001

ER -

Long term charge relaxation in silicon single electron transistors

Abstract

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Keywords

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