Localization and interaction of interlayer excitons in MoSe2/WSe2 heterobilayers

Hanlin Fang*, Qiaoling Lin, Yi Zhang, Joshua Thompson, Sanshui Xiao, Zhipei Sun, Ermin Malic, Saroj P. Dash, Witlef Wieczorek*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)
42 Downloads (Pure)

Abstract

Transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform to explore unique excitonic physics via the properties of the constituent TMDs and external stimuli. Interlayer excitons (IXs) can form in TMD heterobilayers as delocalized or localized states. However, the localization of IX in different types of potential traps, the emergence of biexcitons in the high-excitation regime, and the impact of potential traps on biexciton formation have remained elusive. In our work, we observe two types of potential traps in a MoSe2/WSe2 heterobilayer, which result in significantly different emission behavior of IXs at different temperatures. We identify the origin of these traps as localized defect states and the moiré potential of the TMD heterobilayer. Furthermore, with strong excitation intensity, a superlinear emission behavior indicates the emergence of interlayer biexcitons, whose formation peaks at a specific temperature. Our work elucidates the different excitation and temperature regimes required for the formation of both localized and delocalized IX and biexcitons and, thus, contributes to a better understanding and application of the rich exciton physics in TMD heterostructures.

Original languageEnglish
Article number6910
Number of pages7
JournalNature Communications
Volume14
Issue number1
DOIs
Publication statusPublished - Dec 2023
MoE publication typeA1 Journal article-refereed

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