Loading effects in deep silicon etching

J. Karttunen; J. Kiihamäki; S. Franssila

Loading effects in deep silicon etching

J. Karttunen, J. Kiihamäki, S. Franssila

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Original language	English
Title of host publication	SPIE
Pages	90-97
Publication status	Published - 2000
MoE publication type	A4 Conference publication

Keywords

etching
high aspect ratio
ICP
microsystems
pattern density loading
silicon

Cite this

@inproceedings{840872b352354e3486f7f251e87d79c0,

title = "Loading effects in deep silicon etching",

keywords = "etching, high aspect ratio, ICP, microsystems, pattern density loading, silicon, etching, high aspect ratio, ICP, microsystems, pattern density loading, silicon, etching, high aspect ratio, ICP, microsystems, pattern density loading, silicon",

author = "J. Karttunen and J. Kiiham{\"a}ki and S. Franssila",

year = "2000",

language = "English",

pages = "90--97",

booktitle = "SPIE",

}

TY - GEN

T1 - Loading effects in deep silicon etching

AU - Karttunen, J.

AU - Kiihamäki, J.

AU - Franssila, S.

PY - 2000

Y1 - 2000

KW - etching

KW - high aspect ratio

KW - ICP

KW - microsystems

KW - pattern density loading

KW - silicon

KW - etching

KW - high aspect ratio

KW - ICP

KW - microsystems

KW - pattern density loading

KW - silicon

KW - etching

KW - high aspect ratio

KW - ICP

KW - microsystems

KW - pattern density loading

KW - silicon

M3 - Conference article in proceedings

SP - 90

EP - 97

BT - SPIE

ER -