Abstract
The intrinsic n-type doping limits of tin oxide (SnO2) and indium oxide (In2O3) are predicted on the basis of formation energies calculated by the density-functional theory using the hybrid-functional methodology. The results show that SnO2 allows for a higher n-type doping level than In2O3. While n-type doping is intrinsically limited by compensating acceptor defects in In2O3, the experimentally measured lower conductivities in SnO2-related materials are not a result of intrinsic limits. Our results suggest that by using appropriate dopants in SnO2 higher conductivities similar to In2O3 should be attainable.
Original language | English |
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Article number | 053511 |
Pages (from-to) | 1-6 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 108 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2010 |
MoE publication type | A1 Journal article-refereed |
Keywords
- hybrid functional
- n-type doping
- transparent conducting oxides