Light-induced degradation in multicrystalline silicon: the role of copper

Alessandro Inglese; Alessia Focareta; Florian Schindler; Jonas Schön; Jeanette Lindroos; Martin C. Schubert; Hele Savin

doi:10.1016/j.egypro.2016.07.073

Light-induced degradation in multicrystalline silicon: the role of copper

Alessandro Inglese, Alessia Focareta, Florian Schindler, Jonas Schön, Jeanette Lindroos, Martin C. Schubert, Hele Savin

Electron Physics Group (EPG)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

13 Citations (Scopus)

150 Downloads (Pure)

Abstract

In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain qualitywere found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.

Original language	English
Title of host publication	Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)
Publisher	Elsevier
Pages	808-814
Number of pages	7
Volume	92
DOIs	https://doi.org/10.1016/j.egypro.2016.07.073
Publication status	Published - 25 Sept 2016
MoE publication type	A4 Conference publication
Event	International Conference on Crystalline Silicon Photovoltaics - Chambéry, France Duration: 7 Mar 2016 → 9 Mar 2016 Conference number: 6

Publication series

Name	Energy Procedia
Publisher	Elsevier BV
ISSN (Print)	1876-6102

Conference

Conference	International Conference on Crystalline Silicon Photovoltaics
Abbreviated title	SiliconPV
Country/Territory	France
City	Chambéry
Period	07/03/2016 → 09/03/2016

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10.1016/j.egypro.2016.07.073

1-s2.0-S1876610216305008-mainFinal published version, 393 KBLicence: CC BY-NC-ND

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Inglese, A., Focareta, A., Schindler, F., Schön, J., Lindroos, J., Schubert, M. C., & Savin, H. (2016). Light-induced degradation in multicrystalline silicon: the role of copper. In Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016) (Vol. 92, pp. 808-814). (Energy Procedia). Elsevier. https://doi.org/10.1016/j.egypro.2016.07.073

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title = "Light-induced degradation in multicrystalline silicon: the role of copper",

abstract = "In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain qualitywere found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries. ",

author = "Alessandro Inglese and Alessia Focareta and Florian Schindler and Jonas Sch{\"o}n and Jeanette Lindroos and Schubert, {Martin C.} and Hele Savin",

year = "2016",

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doi = "10.1016/j.egypro.2016.07.073",

language = "English",

volume = "92",

series = "Energy Procedia",

publisher = "Elsevier",

pages = "808--814",

booktitle = "Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)",

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note = "International Conference on Crystalline Silicon Photovoltaics, SiliconPV ; Conference date: 07-03-2016 Through 09-03-2016",

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Inglese, A, Focareta, A, Schindler, F, Schön, J, Lindroos, J, Schubert, MC & Savin, H 2016, Light-induced degradation in multicrystalline silicon: the role of copper. in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016). vol. 92, Energy Procedia, Elsevier, pp. 808-814, International Conference on Crystalline Silicon Photovoltaics, Chambéry, France, 07/03/2016. https://doi.org/10.1016/j.egypro.2016.07.073

Light-induced degradation in multicrystalline silicon: the role of copper. / Inglese, Alessandro; Focareta, Alessia; Schindler, Florian et al.
Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016). Vol. 92 Elsevier, 2016. p. 808-814 (Energy Procedia).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Light-induced degradation in multicrystalline silicon

T2 - International Conference on Crystalline Silicon Photovoltaics

AU - Inglese, Alessandro

AU - Focareta, Alessia

AU - Schindler, Florian

AU - Schön, Jonas

AU - Lindroos, Jeanette

AU - Schubert, Martin C.

AU - Savin, Hele

N1 - Conference code: 6

PY - 2016/9/25

Y1 - 2016/9/25

N2 - In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain qualitywere found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.

AB - In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain qualitywere found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.

U2 - 10.1016/j.egypro.2016.07.073

DO - 10.1016/j.egypro.2016.07.073

M3 - Conference article in proceedings

VL - 92

T3 - Energy Procedia

SP - 808

EP - 814

BT - Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2016)

PB - Elsevier

Y2 - 7 March 2016 through 9 March 2016

ER -

Light-induced degradation in multicrystalline silicon: the role of copper

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