Light-induced degradation in multicrystalline silicon: the role of copper

Alessandro Inglese, Alessia Focareta, Florian Schindler, Jonas Schön, Jeanette Lindroos, Martin C. Schubert, Hele Savin

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    12 Citations (Scopus)
    104 Downloads (Pure)

    Abstract

    In this contribution, we provide an insight into the light-induced degradation of multicrystalline (mc-) silicon caused by copper contamination. Particularly we analyze the degradation kinetics of intentionally contaminated B- and Ga-doped mc-Si through spatially resolved photoluminescence (PL) imaging. Our results show that even small copper concentrations are capable of causing a strong LID effect in both B- and Ga-doped samples. Furthermore, the light intensity, the dopant and the grain qualitywere found to strongly impact the degradation kinetics, since faster LID was observed with stronger illumination intensity, B-doping and in the grains featuring low initial lifetime. Interestingly after degradation we also observe the formation of bright denuded zones near the edges of the B-doped grains, which might indicate the possible accumulation of copper impurities at the grain boundaries.
    Original languageEnglish
    Title of host publication6th International Conference on Silicon Photovoltaics, SiliconPV 2016
    PublisherElsevier
    Pages808-814
    Number of pages7
    DOIs
    Publication statusPublished - 25 Sep 2016
    MoE publication typeA4 Article in a conference publication
    EventInternational Conference on Crystalline Silicon Photovoltaics - Chambéry, France
    Duration: 7 Mar 20169 Mar 2016
    Conference number: 6

    Publication series

    NameENERGY PROCEDIA
    PublisherElsevier
    Volume92
    ISSN (Electronic)1876-6102

    Conference

    ConferenceInternational Conference on Crystalline Silicon Photovoltaics
    Abbreviated titleSiliconPV
    CountryFrance
    CityChambéry
    Period07/03/201609/03/2016

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