Large-diameter indium antimonide microwire based broadband and robust optical switch

Fei Lou; Xiangpeng Cui; Xinyue Sheng; Chunyan Jia; Shuaiyi Zhang; Xia Wang; Vladislav Khayrudinov; Baitao Zhang; Shande Liu; Wing Yim Tam; Harri Lipsanen; He Yang; Jingliang He

doi:10.1007/s11433-022-1969-9

Large-diameter indium antimonide microwire based broadband and robust optical switch

Fei Lou^*, Xiangpeng Cui, Xinyue Sheng, Chunyan Jia, Shuaiyi Zhang, Xia Wang, Vladislav Khayrudinov, Baitao Zhang, Shande Liu, Wing Yim Tam, Harri Lipsanen, He Yang, Jingliang He

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied. Nevertheless, studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful. Here, we successfully grew the micronsized indium antimonide (InSb) wires, and examined their nonlinear optical properties by Z-scan and I-scan (power-dependent) methods within the wavelength range of 0.8–2.8 µm. Furthermore, we demonstrated InSb microwires (MWs) working as an effective and robust optical switch within 1–2.8 µm wavelength. The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.

Original language	English
Article number	224211
Journal	Science China: Physics, Mechanics and Astronomy
Volume	66
Issue number	2
DOIs	https://doi.org/10.1007/s11433-022-1969-9
Publication status	Published - Feb 2023
MoE publication type	A1 Journal article-refereed

Keywords

all-solid-state laser
broadband optical switch
indium antimonide
microwire
nonlinear optical property

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10.1007/s11433-022-1969-9

Cite this

@article{6318443b7dec4330b2dd27633beacdde,

title = "Large-diameter indium antimonide microwire based broadband and robust optical switch",

abstract = "Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied. Nevertheless, studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful. Here, we successfully grew the micronsized indium antimonide (InSb) wires, and examined their nonlinear optical properties by Z-scan and I-scan (power-dependent) methods within the wavelength range of 0.8–2.8 µm. Furthermore, we demonstrated InSb microwires (MWs) working as an effective and robust optical switch within 1–2.8 µm wavelength. The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.",

keywords = "all-solid-state laser, broadband optical switch, indium antimonide, microwire, nonlinear optical property",

author = "Fei Lou and Xiangpeng Cui and Xinyue Sheng and Chunyan Jia and Shuaiyi Zhang and Xia Wang and Vladislav Khayrudinov and Baitao Zhang and Shande Liu and Tam, {Wing Yim} and Harri Lipsanen and He Yang and Jingliang He",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos. 62005139, and 12174212), and Natural Science Foundation of Shandong Province (Grant No. ZR2019MF061). V. Khayrudinov acknowledges the support of Aalto University Doctoral School, Walter Ahlstr{\"o}m Foundation, Elektroniikkainsin{\"o}{\"o}rien S{\"a}{\"a}ti{\"o}, S{\"a}hk{\"o}insin{\"o}{\"o}riliiton S{\"a}{\"a}ti{\"o}, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edist{\"a}miss{\"a}{\"a}ti{\"o}), Waldemar von Frenckell{\textquoteright}s Foundation and Kansallis-Osake-Pankki Fund. The Academy of Finland Photonics Flagship PREIN is acknowledged. We acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre. Publisher Copyright: {\textcopyright} 2022, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature.",

year = "2023",

month = feb,

doi = "10.1007/s11433-022-1969-9",

language = "English",

volume = "66",

journal = "Science China: Physics, Mechanics and Astronomy",

issn = "1674-7348",

publisher = "Science in China Press",

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T1 - Large-diameter indium antimonide microwire based broadband and robust optical switch

AU - Lou, Fei

AU - Cui, Xiangpeng

AU - Sheng, Xinyue

AU - Jia, Chunyan

AU - Zhang, Shuaiyi

AU - Wang, Xia

AU - Khayrudinov, Vladislav

AU - Zhang, Baitao

AU - Liu, Shande

AU - Tam, Wing Yim

AU - Lipsanen, Harri

AU - Yang, He

AU - He, Jingliang

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos. 62005139, and 12174212), and Natural Science Foundation of Shandong Province (Grant No. ZR2019MF061). V. Khayrudinov acknowledges the support of Aalto University Doctoral School, Walter Ahlström Foundation, Elektroniikkainsinöörien Säätiö, Sähköinsinööriliiton Säätiö, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edistämissäätiö), Waldemar von Frenckell’s Foundation and Kansallis-Osake-Pankki Fund. The Academy of Finland Photonics Flagship PREIN is acknowledged. We acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre. Publisher Copyright: © 2022, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature.

PY - 2023/2

Y1 - 2023/2

N2 - Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied. Nevertheless, studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful. Here, we successfully grew the micronsized indium antimonide (InSb) wires, and examined their nonlinear optical properties by Z-scan and I-scan (power-dependent) methods within the wavelength range of 0.8–2.8 µm. Furthermore, we demonstrated InSb microwires (MWs) working as an effective and robust optical switch within 1–2.8 µm wavelength. The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.

AB - Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied. Nevertheless, studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful. Here, we successfully grew the micronsized indium antimonide (InSb) wires, and examined their nonlinear optical properties by Z-scan and I-scan (power-dependent) methods within the wavelength range of 0.8–2.8 µm. Furthermore, we demonstrated InSb microwires (MWs) working as an effective and robust optical switch within 1–2.8 µm wavelength. The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.

KW - all-solid-state laser

KW - broadband optical switch

KW - indium antimonide

KW - microwire

KW - nonlinear optical property

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U2 - 10.1007/s11433-022-1969-9

DO - 10.1007/s11433-022-1969-9

M3 - Article

AN - SCOPUS:85144306143

SN - 1674-7348

VL - 66

JO - Science China: Physics, Mechanics and Astronomy

JF - Science China: Physics, Mechanics and Astronomy

IS - 2

M1 - 224211

ER -

Large-diameter indium antimonide microwire based broadband and robust optical switch

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Keywords

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Findings from Qingdao University of Science and Technology Has Provided New Data on Electronics (Large-diameter Indium Antimonide Microwire Based Broadband and Robust Optical Switch)

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Large-diameter indium antimonide microwire based broadband and robust optical switch

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Findings from Qingdao University of Science and Technology Has Provided New Data on Electronics (Large-diameter Indium Antimonide Microwire Based Broadband and Robust Optical Switch)

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