Klein tunneling through the trapezoidal potential barrier in graphene: Conductance and shot noise

Gheorghe Sorin Paraoanu*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
32 Downloads (Pure)

Abstract

When a single-layer graphene sheet is contacted with metallic electrodes, tunnel barriers are formed as a result of the doping of graphene by the metal in the contact region. If the Fermi energy level is modulated by a gate voltage, the phenomenon of Klein tunneling results in specific features in the conductance and noise. Here we obtain analytically exact solutions for the transmission and reflection probability amplitudes using a trapezoidal potential barrier, allowing us to calculate the differential conductance and the Fano factor for a graphene sheet in the ballistic regime.We put in evidence an unexpected global symmetry-the transmission probability is the same for energies symmetric with respect to half of the barrier height.We outline a proposal for the experimental verification of these ideas using realistic sample parameters.

Original languageEnglish
Article number043027
Number of pages18
JournalNew Journal of Physics
Volume23
Issue number4
DOIs
Publication statusPublished - Apr 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • Doping
  • Electrical conductivity
  • Fano factor
  • Graphene
  • Klein tunneling

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