Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs

Toufik Sadi*, Oves Badami, Vihar Georgiev, Asen Asenov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


By using a stochastic simulation model based on the kinetic Monte Carlo approach, we study the physics, operation and reliability of resistive random-access memory (RRAM) devices based on oxides, including silicon-rich silica (SiO) and hafnium oxide – HfO – a widely used transition metal oxide. The interest in RRAM technology has been increasing steadily in the last ten years, as it is widely viewed as the next generation of non-volatile memory devices. The simulation procedure describes self-consistently electronic charge and thermal transport effects in the three-dimensional (3D) space, allowing the study of the dynamics of conductive filaments responsible for switching. We focus on the study of the reliability of these devices, by specifically looking into how oxygen deficiency in the system affects the switching efficiency.

Original languageEnglish
Title of host publicationLarge-Scale Scientific Computing - 12th International Conference, LSSC 2019, Revised Selected Papers
EditorsIvan Lirkov, Svetozar Margenov
Number of pages9
Publication statusPublished - 1 Jan 2020
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Large-Scale Scientific Computing - Sozopol, Bulgaria
Duration: 10 Jun 201914 Jun 2019
Conference number: 12

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume11958 LNCS
ISSN (Print)0302-9743
ISSN (Electronic)1611-3349


ConferenceInternational Conference on Large-Scale Scientific Computing
Abbreviated titleLSSC


  • Kinetic Monte Carlo
  • Nano-devices
  • RRAM reliability
  • Transport phenomena


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