Abstract
By using a stochastic simulation model based on the kinetic Monte Carlo approach, we study the physics, operation and reliability of resistive random-access memory (RRAM) devices based on oxides, including silicon-rich silica (SiO) and hafnium oxide – HfO – a widely used transition metal oxide. The interest in RRAM technology has been increasing steadily in the last ten years, as it is widely viewed as the next generation of non-volatile memory devices. The simulation procedure describes self-consistently electronic charge and thermal transport effects in the three-dimensional (3D) space, allowing the study of the dynamics of conductive filaments responsible for switching. We focus on the study of the reliability of these devices, by specifically looking into how oxygen deficiency in the system affects the switching efficiency.
Original language | English |
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Title of host publication | Large-Scale Scientific Computing - 12th International Conference, LSSC 2019, Revised Selected Papers |
Editors | Ivan Lirkov, Svetozar Margenov |
Pages | 429-437 |
Number of pages | 9 |
DOIs | |
Publication status | Published - 1 Jan 2020 |
MoE publication type | A4 Article in a conference publication |
Event | International Conference on Large-Scale Scientific Computing - Sozopol, Bulgaria Duration: 10 Jun 2019 → 14 Jun 2019 Conference number: 12 |
Publication series
Name | Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) |
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Volume | 11958 LNCS |
ISSN (Print) | 0302-9743 |
ISSN (Electronic) | 1611-3349 |
Conference
Conference | International Conference on Large-Scale Scientific Computing |
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Abbreviated title | LSSC |
Country/Territory | Bulgaria |
City | Sozopol |
Period | 10/06/2019 → 14/06/2019 |
Keywords
- Kinetic Monte Carlo
- Nano-devices
- RRAM reliability
- Transport phenomena