Abstract
Recent trends in 3D integration and dimensional scaling technologies have attracted interest in micro-connects as a novel method for interconnection. Micro-connects, including small volume interconnects (or microbumps) and Solid Liquid Interdiffusion (SLID) bonds for Micro- or Nanoelectromechanical Systems (MEMS and NEMS) are functionally far superior compared with traditional large volume interconnects and enable novel integration techniques
for the miniaturisation and diversification of complex integrated systems. As micro-connects have smaller volumes than traditional forms of interconnects, they become more susceptible to microstructural defects. Such defects can lead to the catastrophic and costly failures within complex integrated systems. This study of Cu-Sn micro-connects has resulted from the publishing of several papers on the reliability reduction with interfacial voiding cited as the root cause. Interfacial voids (often referred to as Kirkendall voids) form in micro-connects fabricated using electroplated Cu in contact with the low melting point metal Sn. A variety of Cu electroplating chemistries and current densities were used to assess the void formation characteristics and the resulting IMC growth rates. The variety of parameters is designed to assess the impacts on void formation. This data will enable electronic integration developers to better understand the reliability impacts and for manufactures to understand key parameters associated with void formation.
for the miniaturisation and diversification of complex integrated systems. As micro-connects have smaller volumes than traditional forms of interconnects, they become more susceptible to microstructural defects. Such defects can lead to the catastrophic and costly failures within complex integrated systems. This study of Cu-Sn micro-connects has resulted from the publishing of several papers on the reliability reduction with interfacial voiding cited as the root cause. Interfacial voids (often referred to as Kirkendall voids) form in micro-connects fabricated using electroplated Cu in contact with the low melting point metal Sn. A variety of Cu electroplating chemistries and current densities were used to assess the void formation characteristics and the resulting IMC growth rates. The variety of parameters is designed to assess the impacts on void formation. This data will enable electronic integration developers to better understand the reliability impacts and for manufactures to understand key parameters associated with void formation.
| Original language | English |
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| Title of host publication | Proceedings of the 18th IEEE Electronics Packaging Technology Conference, EPTC 2016 |
| Publisher | IEEE |
| Pages | 459-467 |
| Number of pages | 9 |
| ISBN (Electronic) | 978-1-5090-4368-2 |
| DOIs | |
| Publication status | Published - 23 Feb 2017 |
| MoE publication type | B3 Non-refereed conference publication |
| Event | IEEE Electronics Packaging Technology Conference - Singapore, Singapore Duration: 30 Nov 2016 → 3 Dec 2016 Conference number: 18 |
Publication series
| Name | Electronics Packaging Technology Conference Proceedings |
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Conference
| Conference | IEEE Electronics Packaging Technology Conference |
|---|---|
| Abbreviated title | EPTC |
| Country/Territory | Singapore |
| City | Singapore |
| Period | 30/11/2016 → 03/12/2016 |