Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks

Yun Sun; Pengpeng Li; Esko I. Kauppinen; Dong Ming Sun; Yutaka Ohno

doi:10.1039/d2ra02088b

Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks

Yun Sun, Pengpeng Li, Esko I. Kauppinen, Dong Ming Sun^*, Yutaka Ohno

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Approximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. Here ultra-high on/off ratios of 10⁷-10⁸ are realized for CNT TFTs with mobility of ∼500 cm² V⁻¹ s⁻¹. We propose that one of the key factors to achieve the high on/off ratio is a clean CNT thin film without charge traps and doping due to residual dispersant used in conventional solution processes. Moreover, on/off ratio degradation under operation voltage is significantly suppressed by decreasing the diameter of CNTs.

Original language	English
Pages (from-to)	16291-16295
Number of pages	5
Journal	RSC Advances
Volume	12
Issue number	25
DOIs	https://doi.org/10.1039/d2ra02088b
Publication status	Published - 1 Jun 2022
MoE publication type	A1 Journal article-refereed

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Key factors for ultra-high on_off ratio thin-film transistors using as-grown carbon nanotube networksFinal published version, 529 KBLicence: CC BY-NC

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title = "Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks",

abstract = "Approximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. Here ultra-high on/off ratios of 107-108 are realized for CNT TFTs with mobility of ∼500 cm2 V−1 s−1. We propose that one of the key factors to achieve the high on/off ratio is a clean CNT thin film without charge traps and doping due to residual dispersant used in conventional solution processes. Moreover, on/off ratio degradation under operation voltage is significantly suppressed by decreasing the diameter of CNTs.",

author = "Yun Sun and Pengpeng Li and Kauppinen, {Esko I.} and Sun, {Dong Ming} and Yutaka Ohno",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (62125406), the National Key Research and Development Program of China (2021YFA1200013), the Key-Area Research and Development Program of Guangdong Province (2019B010934001), the Strategic Priority Research Program of Chinese Academy of Sciences (XDB30000000), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (ZDBS-LY-JSC027), R&D promotion scheme funding international joint research promoted by National Institute of Information and Communications Technology (NICT), Japan, and the Aalto University MIDE program via the CNB-E project and partially supported by the Academy of Finland (Pr. No. 128445). Publisher Copyright: {\textcopyright} 2022 The Royal Society of Chemistry",

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doi = "10.1039/d2ra02088b",

language = "English",

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T1 - Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks

AU - Sun, Yun

AU - Li, Pengpeng

AU - Kauppinen, Esko I.

AU - Sun, Dong Ming

AU - Ohno, Yutaka

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (62125406), the National Key Research and Development Program of China (2021YFA1200013), the Key-Area Research and Development Program of Guangdong Province (2019B010934001), the Strategic Priority Research Program of Chinese Academy of Sciences (XDB30000000), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (ZDBS-LY-JSC027), R&D promotion scheme funding international joint research promoted by National Institute of Information and Communications Technology (NICT), Japan, and the Aalto University MIDE program via the CNB-E project and partially supported by the Academy of Finland (Pr. No. 128445). Publisher Copyright: © 2022 The Royal Society of Chemistry

PY - 2022/6/1

Y1 - 2022/6/1

N2 - Approximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. Here ultra-high on/off ratios of 107-108 are realized for CNT TFTs with mobility of ∼500 cm2 V−1 s−1. We propose that one of the key factors to achieve the high on/off ratio is a clean CNT thin film without charge traps and doping due to residual dispersant used in conventional solution processes. Moreover, on/off ratio degradation under operation voltage is significantly suppressed by decreasing the diameter of CNTs.

AB - Approximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. Here ultra-high on/off ratios of 107-108 are realized for CNT TFTs with mobility of ∼500 cm2 V−1 s−1. We propose that one of the key factors to achieve the high on/off ratio is a clean CNT thin film without charge traps and doping due to residual dispersant used in conventional solution processes. Moreover, on/off ratio degradation under operation voltage is significantly suppressed by decreasing the diameter of CNTs.

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Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks

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