Issues in first-principles calculations for defects in semiconductors and oxides

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Issues in first-principles calculations for defects in semiconductors and oxides. / Nieminen, R.M.

In: Modelling and Simulation in Materials Science and Engineering, Vol. 17, 2009.

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@article{f36c7839800c48dcb38b24975e5e0d30,
title = "Issues in first-principles calculations for defects in semiconductors and oxides",
keywords = "first-principles modeling, points defects, first-principles modeling, points defects, first-principles modeling, points defects",
author = "R.M. Nieminen",
year = "2009",
language = "English",
volume = "17",
journal = "Modelling and Simulation in Materials Science and Engineering",
issn = "0965-0393",
publisher = "IOP Publishing Ltd.",

}

RIS - Download

TY - JOUR

T1 - Issues in first-principles calculations for defects in semiconductors and oxides

AU - Nieminen, R.M.

PY - 2009

Y1 - 2009

KW - first-principles modeling

KW - points defects

KW - first-principles modeling

KW - points defects

KW - first-principles modeling

KW - points defects

M3 - Article

VL - 17

JO - Modelling and Simulation in Materials Science and Engineering

JF - Modelling and Simulation in Materials Science and Engineering

SN - 0965-0393

ER -

ID: 3600844