Island growth as a growth mode in atomic layer deposition: A phenomenological model

Riikka L. Puurunen; Wilfried Vandervorst

doi:10.1063/1.1810193

Island growth as a growth mode in atomic layer deposition: A phenomenological model

Riikka L. Puurunen^*, Wilfried Vandervorst

^*Corresponding author for this work

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

296 Citations (Scopus)

Abstract

A division of atomic layer deposition (ALD) processes to four classes was proposed, on the basis of how the growth-per-cycle (GPC) varied with the number of ALD reaction cycles. Island growth was identified as a likely origin for type 2 substrate-inhibited growth. A simple phenomenological model was developed to describe island growth in ALD. The benefits and limitations of the model and the general characteristics of type 2 substrate-inhibited ALD were discussed.

Original language	English
Article number	10
Pages (from-to)	7686-7695
Number of pages	10
Journal	Journal of Applied Physics
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.1810193
Publication status	Published - 15 Dec 2004
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.1810193

Cite this

@article{990d390414ce4d80ba9a525be1a455a1,

title = "Island growth as a growth mode in atomic layer deposition: A phenomenological model",

abstract = "A division of atomic layer deposition (ALD) processes to four classes was proposed, on the basis of how the growth-per-cycle (GPC) varied with the number of ALD reaction cycles. Island growth was identified as a likely origin for type 2 substrate-inhibited growth. A simple phenomenological model was developed to describe island growth in ALD. The benefits and limitations of the model and the general characteristics of type 2 substrate-inhibited ALD were discussed.",

author = "Puurunen, {Riikka L.} and Wilfried Vandervorst",

year = "2004",

month = dec,

day = "15",

doi = "10.1063/1.1810193",

language = "English",

volume = "96",

pages = "7686--7695",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Island growth as a growth mode in atomic layer deposition

T2 - A phenomenological model

AU - Puurunen, Riikka L.

AU - Vandervorst, Wilfried

PY - 2004/12/15

Y1 - 2004/12/15

N2 - A division of atomic layer deposition (ALD) processes to four classes was proposed, on the basis of how the growth-per-cycle (GPC) varied with the number of ALD reaction cycles. Island growth was identified as a likely origin for type 2 substrate-inhibited growth. A simple phenomenological model was developed to describe island growth in ALD. The benefits and limitations of the model and the general characteristics of type 2 substrate-inhibited ALD were discussed.

AB - A division of atomic layer deposition (ALD) processes to four classes was proposed, on the basis of how the growth-per-cycle (GPC) varied with the number of ALD reaction cycles. Island growth was identified as a likely origin for type 2 substrate-inhibited growth. A simple phenomenological model was developed to describe island growth in ALD. The benefits and limitations of the model and the general characteristics of type 2 substrate-inhibited ALD were discussed.

UR - http://www.scopus.com/inward/record.url?scp=11044224578&partnerID=8YFLogxK

U2 - 10.1063/1.1810193

DO - 10.1063/1.1810193

M3 - Article

AN - SCOPUS:11044224578

SN - 0021-8979

VL - 96

SP - 7686

EP - 7695

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 10

ER -

Island growth as a growth mode in atomic layer deposition: A phenomenological model

Abstract

Access to Document

Other files and links

Cite this