Irradiation-induced defects in InN and GaN studied with positron annihilation

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Floris Reurings

  • Filip Tuomisto

  • Werner Egger
  • Benjamin Löwe
  • Luca Ravelli
  • Sstanislav Sojak
  • Zuzanna Liliental-Weber
  • Rebecca E. Jones
  • Kin M. Yu
  • Wladek Walukiewicz
  • William J. Schaff

Research units

  • Universität der Bundeswehr München
  • University of Trento
  • Slovak University of Technology
  • Lawrence Berkeley National Laboratory
  • Cornell University

Details

Original languageEnglish
Pages (from-to)1087-1090
Number of pages4
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Volume207
Issue number5
Publication statusPublished - May 2010
MoE publication typeA1 Journal article-refereed

    Research areas

  • GaN, InN, irradiation damage, positron, vacancy

ID: 806316