(Invited) Photo-Assisted ALD: Process Development and Application Perspectives

Ville Miikkulainen; Katja Väyrynen; Väinö Kilpi; Zhongmei Han; Marko Vehkamäki; Kenichiro Mizohata; Jyrki Räisänen; Mikko Kalervo Ritala

doi:10.1149/08003.0049ecst

(Invited) Photo-Assisted ALD: Process Development and Application Perspectives

Ville Miikkulainen, Katja Väyrynen, Väinö Kilpi, Zhongmei Han, Marko Vehkamäki, Kenichiro Mizohata, Jyrki Räisänen, Mikko Kalervo Ritala

Not published at Aalto University

University of Helsinki

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Abstract

Atomic layer deposition (ALD) is a highly versatile thin-film deposition method that is presently utilized in many steps within microelectronic process flow and is gaining more and more interest in other fields of industry as well. The prosperity of ALD originates from its capability to controllably deposit high-quality films uniformly and conformally over large areas and complicated features. However, one of the main challenges of ALD, lateral control of film growth, stems from these same properties. Selective-area ALD (S-ALD) is presently a subject of intense research and development work as the targeted feature sizes in the semiconductor applications have reduced to a level exceeding the capabilities of lithography methods. Photo-assisted ALD (Photo-ALD) is a less-studied approach to facilitate S-ALD and selection of materials accessible with Photo-ALD is scarce. The present paper contributes to this field by reporting studies on Photo-ALD processes for metal oxides and metals.

Original language	English
Journal	ECS Transactions
Volume	80
Issue number	3
DOIs	https://doi.org/10.1149/08003.0049ecst
Publication status	Published - 2017
MoE publication type	A1 Journal article-refereed

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Cite this

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title = "(Invited) Photo-Assisted ALD: Process Development and Application Perspectives",

abstract = "Atomic layer deposition (ALD) is a highly versatile thin-film deposition method that is presently utilized in many steps within microelectronic process flow and is gaining more and more interest in other fields of industry as well. The prosperity of ALD originates from its capability to controllably deposit high-quality films uniformly and conformally over large areas and complicated features. However, one of the main challenges of ALD, lateral control of film growth, stems from these same properties. Selective-area ALD (S-ALD) is presently a subject of intense research and development work as the targeted feature sizes in the semiconductor applications have reduced to a level exceeding the capabilities of lithography methods. Photo-assisted ALD (Photo-ALD) is a less-studied approach to facilitate S-ALD and selection of materials accessible with Photo-ALD is scarce. The present paper contributes to this field by reporting studies on Photo-ALD processes for metal oxides and metals.",

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T1 - (Invited) Photo-Assisted ALD

T2 - Process Development and Application Perspectives

AU - Miikkulainen, Ville

AU - Väyrynen, Katja

AU - Kilpi, Väinö

AU - Han, Zhongmei

AU - Vehkamäki, Marko

AU - Mizohata, Kenichiro

AU - Räisänen, Jyrki

AU - Ritala, Mikko Kalervo

PY - 2017

Y1 - 2017

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AB - Atomic layer deposition (ALD) is a highly versatile thin-film deposition method that is presently utilized in many steps within microelectronic process flow and is gaining more and more interest in other fields of industry as well. The prosperity of ALD originates from its capability to controllably deposit high-quality films uniformly and conformally over large areas and complicated features. However, one of the main challenges of ALD, lateral control of film growth, stems from these same properties. Selective-area ALD (S-ALD) is presently a subject of intense research and development work as the targeted feature sizes in the semiconductor applications have reduced to a level exceeding the capabilities of lithography methods. Photo-assisted ALD (Photo-ALD) is a less-studied approach to facilitate S-ALD and selection of materials accessible with Photo-ALD is scarce. The present paper contributes to this field by reporting studies on Photo-ALD processes for metal oxides and metals.

UR - https://researchportal.helsinki.fi/en/publications/f892966b-3d48-497a-9cba-ce77097c18c5

U2 - 10.1149/08003.0049ecst

DO - 10.1149/08003.0049ecst

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SN - 1938-5862

VL - 80

JO - ECS Transactions

JF - ECS Transactions

IS - 3

ER -

(Invited) Photo-Assisted ALD: Process Development and Application Perspectives

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