Investigations of the effects of processing steps on the characteristics of GaAs MESFETs by X-ray topography.

T. Tuomi, P. McNally, T. Herbert

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationGermany
    Pages883-884
    Publication statusPublished - 1995
    MoE publication typeD4 Published development or research report or study

    Keywords

    • synchtrotron X-ray topography, semiconductors

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