@article{085068d733a1405bbbbfd25b628f8df8,
title = "Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synhrotron x-ray topography",
keywords = "Raman spectrometry, silicon, strain, synchrotron x-ray topography, Raman spectrometry, silicon, strain, synchrotron x-ray topography, Raman spectrometry, silicon, strain, synchrotron x-ray topography",
author = "D. Lowney and T.S. Perova and M. Nolan and P.J. McNally and R.A. Moore and H.S. Gamble and T. Tuomi and R. Rantam{\"a}ki and A.N. Danilewsky",
year = "2002",
language = "English",
pages = "1081--1089",
journal = "Semiconductor Science and Technology",
issn = "1361-6641",
publisher = "Institute of Physics Publishing",
number = "17",
}