Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synhrotron x-ray topography

D. Lowney, T.S. Perova, M. Nolan, P.J. McNally, R.A. Moore, H.S. Gamble, T. Tuomi, R. Rantamäki, A.N. Danilewsky

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1081-1089
    JournalSemiconductor Science and Technology
    Issue number17
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Raman spectrometry
    • silicon
    • strain
    • synchrotron x-ray topography

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