Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Jie Liang
  • Rongmei Chen
  • Raphael Ramos
  • Jaehyun Lee
  • Hanako Okuno
  • Dipankar Kalita
  • Vihar Georgiev
  • Salim Berrada
  • Dr Toufik Sadi

  • Benjamin Uhlig
  • Katherina Lilienthal
  • Abitha Dhavamani
  • Fabian Konemann
  • Bernd Gotsmann
  • Goncalves Goncalves
  • Bingan Chen
  • Asen Asenov
  • Jean Dijon
  • Aida Todri-Sanial

Research units

  • Universite de Montpellier
  • CNRS/IN2P3
  • University of Glasgow
  • Fraunhofer Institute for Photonic Microsystems IPMS
  • IBM Zurich Research Laboratory
  • Aixtron Ltd

Abstract

In this paper, we investigate, by combining electrical measurements with an atomistic-To-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.

Details

Original languageEnglish
Article number8664183
Pages (from-to)2346-2352
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number5
Publication statusPublished - 1 May 2019
MoE publication typeA1 Journal article-refereed

    Research areas

  • Carbon nanotube (cnt), cnt contact resistance, defective cnts, doped cnts, doping process of cnt, individual cnt growth, local on-chip interconnects

ID: 33936879