TY - JOUR
T1 - Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications
AU - Liang, Jie
AU - Chen, Rongmei
AU - Ramos, Raphael
AU - Lee, Jaehyun
AU - Okuno, Hanako
AU - Kalita, Dipankar
AU - Georgiev, Vihar
AU - Berrada, Salim
AU - Sadi, Toufik
AU - Uhlig, Benjamin
AU - Lilienthal, Katherina
AU - Dhavamani, Abitha
AU - Konemann, Fabian
AU - Gotsmann, Bernd
AU - Goncalves, Goncalves
AU - Chen, Bingan
AU - Asenov, Asen
AU - Dijon, Jean
AU - Todri-Sanial, Aida
PY - 2019/5/1
Y1 - 2019/5/1
N2 - In this paper, we investigate, by combining electrical measurements with an atomistic-To-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.
AB - In this paper, we investigate, by combining electrical measurements with an atomistic-To-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.
KW - Carbon nanotube (cnt)
KW - cnt contact resistance
KW - defective cnts
KW - doped cnts
KW - doping process of cnt
KW - individual cnt growth
KW - local on-chip interconnects
UR - http://www.scopus.com/inward/record.url?scp=85064984855&partnerID=8YFLogxK
U2 - 10.1109/TED.2019.2901658
DO - 10.1109/TED.2019.2901658
M3 - Article
AN - SCOPUS:85064984855
VL - 66
SP - 2346
EP - 2352
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 5
M1 - 8664183
ER -