The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10 mV/V), sub threshold slope (SS∼64mV/dec.). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large ION/IOFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |VTH| ∼ 0.31 V is maintained. Moreover, the calculated quantum capacitance (CQ) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.
- 3D TCAD simulation
- Quantum confinement effects