Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Vasanthan Thirunavukkarasu; Jaehyun Lee; Toufik Sadi; Vihar P. Georgiev; Fikru Adamu Lema; Karuppasamy Pandian Soundarapandian; Yi Ruei Jhan; Shang Yi Yang; Yu Ru Lin; Erry Dwi Kurniawan; Yung Chun Wu; Asen Asenov

doi:10.1016/j.spmi.2017.07.020

Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Vasanthan Thirunavukkarasu, Jaehyun Lee, Toufik Sadi, Vihar P. Georgiev, Fikru Adamu Lema, Karuppasamy Pandian Soundarapandian, Yi Ruei Jhan, Shang Yi Yang, Yu Ru Lin, Erry Dwi Kurniawan, Yung Chun Wu^*, Asen Asenov

^*Corresponding author for this work

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (L_G) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10 mV/V), sub threshold slope (SS∼64mV/dec.). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large I_ON/I_OFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |V_TH| ∼ 0.31 V is maintained. Moreover, the calculated quantum capacitance (C_Q) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.

Original language	English
Pages (from-to)	649-655
Number of pages	7
Journal	Superlattices and Microstructures
Volume	111
DOIs	https://doi.org/10.1016/j.spmi.2017.07.020
Publication status	Published - 1 Nov 2017
MoE publication type	A1 Journal article-refereed

Keywords

3D TCAD simulation
FinFETs
Germanium
Junctionless
Quantum confinement effects

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title = "Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs",

abstract = "The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10 mV/V), sub threshold slope (SS∼64mV/dec.). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large ION/IOFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |VTH| ∼ 0.31 V is maintained. Moreover, the calculated quantum capacitance (CQ) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.",

keywords = "3D TCAD simulation, FinFETs, Germanium, Junctionless, Quantum confinement effects",

author = "Vasanthan Thirunavukkarasu and Jaehyun Lee and Toufik Sadi and Georgiev, {Vihar P.} and Lema, {Fikru Adamu} and Soundarapandian, {Karuppasamy Pandian} and Jhan, {Yi Ruei} and Yang, {Shang Yi} and Lin, {Yu Ru} and Kurniawan, {Erry Dwi} and Wu, {Yung Chun} and Asen Asenov",

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doi = "10.1016/j.spmi.2017.07.020",

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AU - Thirunavukkarasu, Vasanthan

AU - Lee, Jaehyun

AU - Sadi, Toufik

AU - Georgiev, Vihar P.

AU - Lema, Fikru Adamu

AU - Soundarapandian, Karuppasamy Pandian

AU - Jhan, Yi Ruei

AU - Yang, Shang Yi

AU - Lin, Yu Ru

AU - Kurniawan, Erry Dwi

AU - Wu, Yung Chun

AU - Asenov, Asen

PY - 2017/11/1

Y1 - 2017/11/1

N2 - The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10 mV/V), sub threshold slope (SS∼64mV/dec.). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large ION/IOFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |VTH| ∼ 0.31 V is maintained. Moreover, the calculated quantum capacitance (CQ) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.

AB - The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10 mV/V), sub threshold slope (SS∼64mV/dec.). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large ION/IOFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |VTH| ∼ 0.31 V is maintained. Moreover, the calculated quantum capacitance (CQ) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.

KW - 3D TCAD simulation

KW - FinFETs

KW - Germanium

KW - Junctionless

KW - Quantum confinement effects

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JO - Superlattices and Microstructures

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Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

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