Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Vasanthan Thirunavukkarasu, Jaehyun Lee, Toufik Sadi, Vihar P. Georgiev, Fikru Adamu Lema, Karuppasamy Pandian Soundarapandian, Yi Ruei Jhan, Shang Yi Yang, Yu Ru Lin, Erry Dwi Kurniawan, Yung Chun Wu*, Asen Asenov

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10 mV/V), sub threshold slope (SS∼64mV/dec.). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large ION/IOFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |VTH| ∼ 0.31 V is maintained. Moreover, the calculated quantum capacitance (CQ) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.

Original languageEnglish
Pages (from-to)649-655
Number of pages7
JournalSuperlattices and Microstructures
Volume111
DOIs
Publication statusPublished - 1 Nov 2017
MoE publication typeA1 Journal article-refereed

Keywords

  • 3D TCAD simulation
  • FinFETs
  • Germanium
  • Junctionless
  • Quantum confinement effects

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