Investigation of Al2O3 Passivation Layers by Photoluminescence Imaging under Applied Voltage

Halvard Haug, Bao Yameng, Hele Savin, Erik S. Marstein

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

Abstract

In this work, the passivation properties of Al2O3 thin films deposited by atomic layer deposition on p-type Si substrates has been studied by photoluminescence imaging under applied bias (PL-V). By measuring the carrier lifetime as a function of voltage this method enables investigations of the recombination properties of the Al2O3/c-Si interface under various band bending conditions in a simple and reproducible manner. The results were interpreted in the framework of the extended Shockley-Read-Hall theory using the fixed charge density and surface recombination velocity parameters 0 and 0 as fitting parameters. The extracted values were also found to be in good agreement with results from capacitance-voltage measurements. A high carrier lifetime above 1.5 ms was obtained with the traditionally used precursors Trimethylaluminum (TMA) and ozone (O3), producing layers with a large negative of −4×1012 cm-2. Samples were also deposited using a combination of TMA and the low-cost alternative precursor dimethylaluminium chloride (DMACl), also providing good passivation with carrier lifetimes over 1 ms on Cz substrates. For these samples, , 0 and 0 were all observed to decrease with increasing deposition temperature from 100 °C to 300 °C, with the best passivation quality obtained at 300 °C. For all the investigated samples 0 was found to be larger than 0 by a factor between 2 and 5.
Original languageEnglish
Title of host publicationProceedings of the 32nd European Photovoltaic Solar Energy Conference and Exhibition
Subtitle of host publicationEU PVSEC 2016
PublisherEU PVSEC
Pages514-518
Number of pages5
ISBN (Print)3-936338-41-8
DOIs
Publication statusPublished - 2016
MoE publication typeB3 Non-refereed conference publication
EventEuropean Photovoltaic Solar Energy Conference and Exhibition - Munich, Germany
Duration: 20 Jun 201624 Jun 2016
Conference number: 32

Conference

ConferenceEuropean Photovoltaic Solar Energy Conference and Exhibition
Abbreviated titleEU PVSEC
Country/TerritoryGermany
CityMunich
Period20/06/201624/06/2016

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