Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy

K. Saarinen, A.P. Seitsonen, P. Hautojärvi, C. Corbel

Research output: Contribution to journalArticleScientificpeer-review

33 Citations (Scopus)
Original languageEnglish
JournalPhysical Review B
Volume52
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed

Keywords

  • GaAs
  • positron

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