Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy

K. Saarinen, A.P. Seitsonen, P. Hautojärvi, C. Corbel

Research output: Contribution to journalArticleScientificpeer-review

33 Citations (Scopus)
Original languageEnglish
JournalPhysical Review B
Publication statusPublished - 1995
MoE publication typeA1 Journal article-refereed


  • GaAs
  • positron

Cite this